DSA patterning options for FinFET formation at 7nm node

Liu, Chi-Chun Charlie; Franke, Elliott; Lie, Fee Li; Sieg, Stuart; Tsai, Hsinyu; Lai, Kafai; Truong, Hoa D.; Farrell, Richard A.; Somervell, Mark; Sanders, Daniel P.; Felix, Nelson; Guillorn, Michael A.; Burns, Sean; Hetzer, David; Ko, Akiteru; Arnold, John; Colburn, Matthew

doi:10.1117/12.2219670

Cited by 7 publications

(9 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Directed self-assembly (DSA) of block copolymers (BCPs) has received considerable attention in recent years from both academia and industry for applications in advanced lithography and semiconductor patterning. − DSA harnesses lithographically defined templates with chemical contrast and/or topography to precisely control the placement of self-assembled BCP nanostructures. , The BCP can spontaneously interpolate between the lithographic features, multiplying the feature density and patterning resolution. , High levels of perfection and pattern complexity have been achieved, and DSA-based device integration has been demonstrated. − For DSA to be applicable in high volume semiconductor manufacturing, challenges remain in defect reduction to reach the industrial target of less than 1 defect per 100 cm 2 area within process-friendly time scales.…”

Section: Introductionmentioning

confidence: 99%

Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly

Ren

Zhou

Chen

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Directed self-assembly (DSA) of block copolymers (BCPs) can achieve perfectly aligned structures at thermodynamic equilibrium, but the self-assembling morphology can become kinetically trapped in defective states. Understanding and optimizing the kinetic pathway toward domain alignment is crucial for enhancing process throughput and lowering defectivity to levels required for semiconductor manufacturing, but there is a dearth of experimental, three-dimensional studies of the kinetic pathways in DSA. Here, we combined arrested annealing and TEM tomography to probe the kinetics and structural evolution in the chemoepitaxy DSA of PS- b-PMMA with density multiplication. During the initial stages of annealing, BCP domains developed independently at first, with aligned structures at the template interface and randomly oriented domains at the top surface. As the grains coarsened, the assembly became cooperative throughout the film thickness, and a metastable stitch morphology was formed, representing a kinetic barrier. The stitch morphology had a three-dimensional structure consisting of both perpendicular and parallel lamellae. On the basis of the mechanistic information, we studied the effect of key design parameters on the kinetics and evolution of structures in DSA. Three types of structural evolutions were observed at different film thicknesses: (1) immediate alignment and fast assembly when thickness < L ( L = BCP natural periodicity); (2) formation of stitch morphology for 1.25-1.45 L; (3) fingerprint formation when thickness >1.64 L. We found that the DSA kinetics can be significantly improved by avoiding the formation of the metastable stitch morphology. Increasing template topography also enhanced the kinetics by increasing the PMMA guiding surface area. A combination of 0.75 L BCP thickness and 0.50 L template topography achieved perfect alignment over 100 times faster than the baseline process. This research demonstrates that an improved understanding of the evolution of structures during DSA can significantly improve the DSA process.

show abstract

Section: Introductionmentioning

confidence: 99%

Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly

Ren

Zhou

Chen

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…The FinFET nanodevice displayed reasonable electrical performance, including a low draininduced barrier lowering, a subthreshold slope of 70 mV/ decade, and a current on-off ratio of 1 × 10 5 . Based on the directed self-assembly of lamella-forming PS-b-PMMA, the fabrication of FinFET nanodevices with a 27-nm pitch fin structure was also demonstrated on a 300-mm pilot line that integrated with 193-nm immersion lithography and standard semiconductor manufacturing processes (Liu et al, 2016). High aspect ratio silicon fin structures with 100 nm height and a critical dimension of 8-10 nm were constructed.…”

Section: Fin Field-effect Transistorsmentioning

confidence: 99%

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Xiong

2022

Front. Nanotechnol.

View full text Add to dashboard Cite

Block copolymer (BCP) self-assembly, as a novel bottom-up patterning technique, has received increasing attention in the manufacture of nanodevices because of its significant advantages of high resolution, high throughput, low cost, and simple processing. BCP self-assembly provides a very powerful approach to constructing diverse nanoscale templates and patterns that meet large-scale manufacturing practices. For the past 20 years, the self-assembly of BCPs has been extensively employed to produce a range of nanodevices, such as nonvolatile memory, bit-patterned media (BPM), fin field-effect transistors (FinFETs), photonic nanodevices, solar cells, biological and chemical sensors, and ultrafiltration membranes, providing a variety of configurations for high-density integration and cost-efficient manufacturing. In this review, we summarize the recent progress in the fabrication of nanodevices using the templates of BCP self-assembly, and present current challenges and future opportunities.

show abstract

“…Our work further serves as an expansion of recently published work by IBM and Tel. 30 Their work utilizes an organic planarization layer, which allows for similar creation of sparse features. They also highlight the importance of DSA's thermodynamically driven CDU, where our work differs is in the use of materials.…”

Section: Metal-polymer Interactions Are Not Explained By Surface Enermentioning

confidence: 99%

Utilization of metal–polymer interactions for self-aligned directed self-assembly of device relevant features

Dolejsi

Nealey

2018

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Self-aligned strategies are required because today's feature sizes are beyond the resolution limit of the exposure tools. One self-aligned strategy is directed self-assembly (DSA), where block copolymers (BCP) are thermodynamically driven to self-align with a lithographically defined template with chemical contrast and/or topography. It would be particularly advantageous to also encode existing structures into thermodynamic information, then thermodynamics would cause BCP to self-align to these existing structures rectifying placement error. These existing features could be cut masks, which are required to fabricate devices from line and space arrays, or they could be interconnects. Here, we show a technique, by which metal-polymer interactions can be used in place of polymer-polymer interactions. These metal-polymer interactions, which cannot be adequately described by conventional surface energy comparisons, allow for a true self-aligned process. We begin by classifying process relevant metals including gold, aluminum, copper, tungsten, and cobalt, based upon their thermodynamic interactions with poly(styrene-block-methyl methacrylate). We then created guide patterns using metal and dielectric line space arrays. These patterns, when combined with DSA, allow for lines and space patterns to be self-aligned to any exposed metal features and reduce process constraints on exposure tools. Our process can also be used to align line and space patterns to metal layers during the back end of the line processing. A similar process could also be used to guide contact hole shrink to correct for placement error in the initial lithographic template.

show abstract

DSA patterning options for FinFET formation at 7nm node

Cited by 7 publications

References 6 publications

Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly

Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Utilization of metal–polymer interactions for self-aligned directed self-assembly of device relevant features

Contact Info

Product

Resources

About