Currently, the photodetectors (PDs) assembled by vertically
aligned
nanostructured arrays have attracted intensive interest owing to their
unique virtues of low light reflectivity and rapid charge transport.
However, in terms of the inherent limitations caused by numerous interfaces
often existed within the assembled arrays, the photogenerated carriers
cannot be effectively separated, thus weakening the performance of
target PDs. Aiming at resolving this critical point, a high-performance
ultraviolet (UV) PD with a single-crystal integrated self-supporting
4H-SiC nanohole arrays is constructed, which are prepared via the
anode oxidation approach. As a result, the PD delivers an excellent
performance with a high switching ratio (∼250), remarkable
detectivity (6 × 1010 Jones), fast response (0.5 s/0.88
s), and excellent stability under 375 nm light illumination with a
bias voltage of 5 V. Moreover, it has a high responsivity (824 mA/W),
superior to those of most reported ones based on 4H-SiC. The overall
high performance of the PDs could be mainly attributed to the synergistic
effect of the SiC nanohole arrays’ geometry, a whole single-crystal
integrated self-supporting film without interfaces, established reliable
Schottky contact, and incorporated N dopants.