Dual-band multi-mode power amplifier module using a third generation HBT technology

Abstract

A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbondoped base has been established in Motorola's highvolume 6" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers have 30 dB gain, and provide an EDGE (8-PSK) signal at 28 dBm, an NADC signal at 30 dBm, and a GMSK signal at 32 dBm in their respective frequency bands, using a single 3.5 V source. All matching elements external to the chip are included in a low cost epoxy substrate which is 9 x 12 x 1.6 mm3. Prospects of using this technology in W-CDMA applications have also been explored. A prototype achieves an ACPR of -41 dBc at 28 dBm output power with an efficiency of 36%.

Analysis and research of EMI filter based on SiC power device

“…SiC power electronic devices will play more and more advantages in improving power efficiency and meeting high frequency and high voltage [15,16].. SiC devices will be more widely used in the future. In this paper, the electromagnetic interference of SiC drive circuit is discussed.…”