2018 IEEE Wireless Power Transfer Conference (WPTC) 2018
DOI: 10.1109/wpt.2018.8639451
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Dual-band Rectenna Using Voltage Doubler Rectifier and Four-Section Matching Network

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Cited by 22 publications
(7 citation statements)
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“…Various rectifier designs, such as single frequency [4][5][6][7][8][9], dual-band [10][11][12][13][14][15][16][17][18], tri-band [19][20][21][22][23][24][25], quad-band [26][27][28], and broadband [29], are used to create an efficient rectifier.…”
Section: Literature Reviewmentioning
confidence: 99%
See 2 more Smart Citations
“…Various rectifier designs, such as single frequency [4][5][6][7][8][9], dual-band [10][11][12][13][14][15][16][17][18], tri-band [19][20][21][22][23][24][25], quad-band [26][27][28], and broadband [29], are used to create an efficient rectifier.…”
Section: Literature Reviewmentioning
confidence: 99%
“…Chandravanshi and Akhtar [11] and Rotenberg et al [12] developed dual band rectifiers with higher efficiency (>70%), despite requiring more input power (>9 dBm) to achieve higher performance. Aboualalaa et al [13] improves PCE with a foursection matching network and achieves 69% efficiency at 15.5 dBm input power.…”
Section: Narayanan and Thangavelmentioning
confidence: 99%
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“…However, in this design a half-wave voltage doubler circuit, which is a special case of voltage multipliers, is used for the rectification to get high voltage with conservation of the design simplicity. The rectifier design as well as the matching network is depicted in Figure 21 [52]. The voltage doubler circuit comprises two Avago HSMS2850 Schottky diodes and two SMD capacitors (C s =C p = 100 pF).…”
Section: Rectifier Designmentioning
confidence: 99%
“…The efficiency obtained was greater than 30% at 942 MHz and greater than 20% at 1805 MHz for an input power greater than −10 dBm and an output load equal to 15 kOhm. In 2018 [11], a voltage-doubler circuit as a rectifier was introduced, which consisted of two Avago HSMS2850 Schottky diodes and two capacitors. The results demonstrated that the RF-to-DC maximum efficiency was 63% at 1.95 GHz and 69% at 2.50 GHz, for an input power of 7.0 dBm and 3.5 dBm, respectively, and a resistive load of 1.0 kOhm.…”
Section: Introductionmentioning
confidence: 99%