Dual-Band Terahertz Metamaterial Absorber and Its Refractive-Index-Sensing Application for Material Films

Zhu, Huali; Zhang, Yong; Ye, Longfang; Dang, Zhang; Wei, Haomiao; Zhang, Bo; Fan, Chao; Xu, Ruimin; Yan, Bo

doi:10.1021/acsaom.3c00140

Cited by 3 publications

(1 citation statement)

References 38 publications

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“…Terahertz metamaterial absorber has been studied for nearly a decade, but due to the difficulty of antenna preparation, it is difficult to test at higher frequency bands, so it is mainly concentrated in the stage of simulation design. In recent years, the passive absorbers also have a great development, such as high Q-factor dual-band absorber from Wang et al [103], the multiband terahertz absorber covering entire terahertz band from Ye et al [104], dual-band perfect absorber from Zhu et al [105]. For the active absorber, most of researcher chose VO 2 , BDS, and graphene as their tunable material to achieve the absorbing adjustability or multifunction.…”

Section: Metamaterials Absorber In Terahertzmentioning

confidence: 99%

Advancements in tunable and multifunctional metamaterial absorbers: a comprehensive review of microwave to terahertz frequency range

Liu,

Dong,

Sabri

et al. 2024

J. Phys. D: Appl. Phys.

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Over the past two decades, metamaterial absorbers have undergone significant advancements, evolving from microwave single-frequency designs to multi-frequency and broadband absorption, extending into the terahertz band. These absorbers have transitioned from unadjustable to adjustable and multifunctional configurations, enabled by the integration of adjustable materials, mechanical structures, and semiconductor devices. This article provides a comprehensive review of the progress achieved in the microwave to terahertz frequency range over the last five years. Key aspects covered include the absorbing mechanism of metamaterials in the microwave frequency band, with absorption efficiencies exceeding 90% for specific frequency ranges. The development of adjustable absorbers allows for frequency tunability within ±10% of the central frequency, while multifunctional absorbers enable concurrent control over absorption and reflection properties. In the terahertz regime, advanced electromagnetic simulations have led to absorber designs with bandwidths exceeding 50% of the central frequency, resulting in absorption efficiencies above 80% over the entire bandwidth. Integration of gallium nitride-based Gallium Nitride High Electron Mobility Transistors (GaN HMET) provides fast switching speeds below 100 nanoseconds, facilitating rapid reconfiguration of absorber functionalities. These advancements in metamaterial absorbers offer promising prospects for intelligent and integrated designs in future applications.

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Section: Metamaterials Absorber In Terahertzmentioning

confidence: 99%