Dual capacitor technique for measurement of through-plane modulus of thin polymer films

Patel, Krishna Kumar; Kohl, Paul A.; Allen, Sue Ann Bidstrup

doi:10.1002/(sici)1099-0488(20000615)38:12<1634::aid-polb90>3.0.co;2-v

Cited by 17 publications

(15 citation statements)

References 35 publications

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“…27,28 The difference ͑C 1 − C 2 ͒ = C is the usually reported and widely used value for the stress-optic coefficient of a material when a measurement of the birefringence is made under uniaxial stress conditions. 23,29 The bulk counterpart of the polymer films investigated in this study are known to be isotropic. In the thin film form, on the other hand, these polymers were found to be slightly anisotropic.…”

Section: Resultsmentioning

confidence: 99%

“…The difference of ͑C 1 − C 2 ͒ can be used to compare our results with the widely reported stress-optic coefficient C for bulk polymers where measurement of birefringence is made under uniaxial stress conditions. 23,29 For bulk PS, C is positive with a value of 8.3Br, whereas the calculated C for PS thin films is negative with a value of −19Br. The bulk material value is in agreement with the value of 8-10 Br in other reports in the literature.…”

Section: ͑6͒mentioning

confidence: 99%

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Prism coupling technique investigation of elasto-optical properties of thin polymer films

Kocabas

Kocabaş

et al. 2004

Journal of Applied Physics

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The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three different polymers; polystyrene, polymethyl-methacrylate, and benzocyclobutane. The out-of-plane elastic modulus, refractive index, film thickness, and birefringence of thin polymer films were determined by means of the prism coupling technique. The effect of the applied stress on the refractive index and birefringence of the films was investigated. Three-dimensional finite element method analysis was used so as to obtain the principal stresses for each polymer system, and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined. It was found that the applied stress in the out-of-plane direction of the thin films investigated leads to negative elasto-optic coefficients, as observed for all the three thin polymer films.

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Section: Resultsmentioning

confidence: 99%

Section: ͑6͒mentioning

confidence: 99%

Prism coupling technique investigation of elasto-optical properties of thin polymer films

Kocabas

Kocabaş

et al. 2004

Journal of Applied Physics

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“…The capacitance meter has a range of 0 till 100 pF with a linear Figure 5: fabrication. Fist a 100nm-thick (or 1Im-thick for 2 interdigital electrodes) SiO2 layer is deposited in PECVD 1 reactor. Next to that 1075nm-thick 99%Al / 1% Si sputtered layer is patterned to form the bottom electrodes.…”

Section: Methodsmentioning

confidence: 99%

“…al. [2] thickness modulus of the film can be calculated. The in-Furthermore, this method has no alignment problems thickness modulus is given by 4.76+0.42 GPa, 3.81+0.26 when applying the pressure as seen in other experimental GPa and 3.16+0.15 GPa for 20°C, 500C and 700C methods.…”

Section: Methodsmentioning

confidence: 99%

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Measuring In-Thickness Mechanical Properties of Sub Micron Polymer Dielectric Films

Soestbergen

Ernst²,

Jansen³

et al.

7th. Int. Conf. On Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems

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isotropic material model that may not be applicable for The ongoing miniaturization of microelectronics ha reasons described above. And secondly these tests are led to low-K polymer dielectric films with a thickness of only capable of obtaining the in-plane properties. severalte nanometers. These thin polymer films There are two particular reasons why knowledge of severally tens of the mechanical properties of these dielectrics materials is generally sho ti 1me dependent material properties, that in lateral directions and in-thickness necessary. At first, polymer films have elastic properties airecdiffeent of about 5 GPa which is much lower than the oxide layers Mirtos techniques available for measuringthe previously used as dielectric films having elastic Mechanic prpertiqes ofathinafilms aormeaonlyicapa e of properties of about 70 GPa [6]. This has shown to result mechanical properties of thin filmsareonlycapableof in different failure modes of an IC. And secondly, a obtaining the in-plane modulus. To have an in-situ relative low modulus may result in pattern shift of the measurement of the in-thickness viscoelastic modulus, a interconnect lines in a polymer film during processing. parallel plate capacitor under hydrostatic pressure is used.In this paer we resent a method for measurin the An interdigitated electrode is used to capture the change p l pXg in ielctrc cnstntuderpresur. A a irs esimaion in-thickness elastic modulus of thin polymer films. The in dielectric constant under pressure. As a first estimation, method is partly based on the work of K. S. Patel et. al. a BCB (benzocyclobutene) film was used. The in [1,2] and H. Liou et. al. [3]. The method discussed here thickness elastic modulus and change in permittivity for a h 1.3~tm thick BCB (CycloteneTm 4022) film sandwiched however is capable of measuring at lower strain levels, between two alumina electrodes on a silicon wafer are measurin at eev tmpera reported to be 4.76+0.42, 3.81+0.26 and 3.16+0.15 GPa the results has been improved. for 20°t 500 and 70°C respectively. The method consists of a parallel plate capacitor and for 20', 50' and 70' C respectively.an interdigitated electrode under a hydrostatic pressure. IntroductionApplying a hydrostatic pressure will not give alignment The dielectric materials used in an IC are required as problems since it distributes the load uniformly onto the electrical insulation and to prevent electrical interference test structures. And on this account the measurement will between its components. The rate of interference depends be accurate even for small strains. By measuring the on the dielectric properties and the dimensions of the capacitance of the initial and compressed state the indielectric material. The microelectronics dimensions are thickness strain and elastic properties can be derived. To continuously decreasing thus requiring dielectric films validate this method an isotropic 1.3 ptm thick BCB film with a thickness of several tens of nanometers. This has is tested.

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A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

et al. 2022

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Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide‐field‐of‐view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low‐temperature low‐cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light‐sensitive organic semiconductor and charge‐trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m−2), along with a responsivity as high as 1.6 A W−1 (wavelength = 465 nm) for a dark current of 0.24 A m−2 (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high‐resolution 3D organic semiconductor devices.

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Dual capacitor technique for measurement of through-plane modulus of thin polymer films

Cited by 17 publications

References 35 publications

Prism coupling technique investigation of elasto-optical properties of thin polymer films

Prism coupling technique investigation of elasto-optical properties of thin polymer films

Measuring In-Thickness Mechanical Properties of Sub Micron Polymer Dielectric Films

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

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