Dual-Collector Lateral Bipolar Magnetotransistor: Negative Sensitivity and Galvanomagnetic Effects

Abstract

The results of measurement of the dual-collector lateral bipolar magnetotransistor, generated in a uniformly doped substrate or in a diffused well were compared and it was established that the collector voltage difference under the influence of a magnetic field has a different sign. The effect is interpreted using the concept of the magnetic sensitivity sign. By means of device-technological simulation we investigated the distribution of charge carriers, current density and recombination speed in a magnetotransistor generated in a well with external connection of substrate and well contacts. It is shown that at a planar arrangement of substrate contacts is responsible for the volumetric concentration-recombination mechanism of negative relative magnetic sensitivity due to Galvanomagnetic effects.