Dual-conductivity mechanism investigation of 2D α-MoO3-based multi-level memristor

Shan, Xin; Liu, Ping; Wang, Fang; Xie, Yangyang; Wei, Junqing; Ma, Zexia; Shi, Yao; Sun, Han; Lu, Shihao; Song, Zhitang; Yan, Xiaobing; Zhang, Kailiang

doi:10.1007/s40843-023-2653-x

Sci. China Mater.

2023

DOI: 10.1007/s40843-023-2653-x

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Dual-conductivity mechanism investigation of 2D α-MoO3-based multi-level memristor

Xin Shan,

Ping Liu,

Fang Wang

et al.

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2024

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Cited by 6 publications

References 38 publications

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Mott Memristors for Neuromorphics

Zhao,

Luan,

Zhai

et al. 2024

Advanced Physics Research

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Neuromorphic computing has emerged as a key solution for overcoming the challenge of von Neumann bottleneck, offering a pathway to more efficient and biologically inspired computing systems. A crucial advancement in this field is the utilization of Mott insulators, where the metal‐insulator transition (MIT) elicits substantial alterations in material properties, infusing renewed vigor into the progression of neuromorphic systems. This review begins by explaining the MIT mechanisms and the preparation processes of Mott insulators, followed by an introduction of Mott memristors and memristor arrays, showing different types of multidimensional integration styles. The applications of Mott memristor in neuromorphic computing are then discussed, which include artificial synapse designs and various artificial neuron architectures for sensory recognition and logic calculation. Finally, facing challenges and potential future directions are outlined for utilizing Mott memristors in the advancement of neuromorphic computing. This review aims to provide a thorough understanding of the latest advancements in Mott memristors and their applications, offering a comprehensive reference for further research in related areas, and contributing to bridging the gap between traditional silicon‐based electronics and future brain‐inspired architectures.

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Mott Memristors for Neuromorphics

Zhao,

Luan,

Zhai

et al. 2024

Advanced Physics Research

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Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

Zhong,

Lin,

Sun

et al. 2024

Applied Surface Science

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Data encryption/decryption and medical image reconstruction based on a sustainable biomemristor designed logic gate circuit

Lin,

Cheng,

et al. 2024

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Dual-conductivity mechanism investigation of 2D α-MoO3-based multi-level memristor

Cited by 6 publications

References 38 publications

Mott Memristors for Neuromorphics

Mott Memristors for Neuromorphics

Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

Data encryption/decryption and medical image reconstruction based on a sustainable biomemristor designed logic gate circuit

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