2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) 2015
DOI: 10.1109/icpe.2015.7167831
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Dual control used in series-loaded resonant converter with SiC devices

Abstract: This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the SiC metal oxide-semiconductor field-effect transistor (MOSFET) with DuC increases the overall efficiency of the SLR converter compared to frequency modulation (FM). For the SiC bipolar junction transistors (BJT), the loss reduction with DuC instead of FM is not as dramatic as for the MOSFET case. Regardless of which transistor type used, the switching l… Show more

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References 27 publications
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