2023
DOI: 10.1088/1361-6641/acb0f3
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Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Abstract: This paper proposes an analytical model for a Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of neutral species such as Biotin, Keratin, ChOx, and Zein. When only one subband is occupied and the AlGaN layer is assumed to have been fully ionized, the Fermi-Dirac statistic and 2D state density are used to produce a self-consistent calculation of the carrier density in the quantum well at the interface.It is done by analyzing the impact of biomolecule concentration by inserting a biomolecule of a… Show more

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Cited by 11 publications
(6 citation statements)
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“…The sensitivities for Uricase, Streptavidin, Protein, Biotin, ChOx, and APTES biomolecules are 4.9%, 10%, 13.4%, 14.6%, 20%, and 22% respectively. Table 3 presents the ∆I DS of N-polar GaN/InAlN MOS-HEMT biosensor and previous reports [26,45,46] for various neutral biomolecules. It can be seen from table 3 that the ∆I DS obtained from this work is higher than the previous studies.…”
Section: Comparative Analysismentioning
confidence: 97%
“…The sensitivities for Uricase, Streptavidin, Protein, Biotin, ChOx, and APTES biomolecules are 4.9%, 10%, 13.4%, 14.6%, 20%, and 22% respectively. Table 3 presents the ∆I DS of N-polar GaN/InAlN MOS-HEMT biosensor and previous reports [26,45,46] for various neutral biomolecules. It can be seen from table 3 that the ∆I DS obtained from this work is higher than the previous studies.…”
Section: Comparative Analysismentioning
confidence: 97%
“…17,[19][20][21][22][23] Among FET-based biosensors, AlGaN/GaN high electronmobility transistor (HEMT) stands out as a more suitable choice for bio-sensing due to its non-toxicity, biocompatibility, and chemical stability. [24][25][26][27][28][29] Above all, the two-dimensional electron gas (2DEG) in the AlGaN/GaN HEMT sensor is a located in close proximity to the surface, rendering it highly responsive to variations in surface potential. In recent years, AlGaN/GaN HEMT sensors have been successfully employed for the detection of proteins (biomarkers, antigens), [30][31][32] ions, 29,[33][34][35][36] DNA hybridization, 37 and pH [38][39][40][41] in solution or serum samples due to their various advantages mentioned above.…”
Section: Introductionmentioning
confidence: 99%
“…To overcome these difficulties, AlGaN/GaN-MOSHEMT devices are proposed to reduce gate leakage with enhancement mode operation. These devices play a significant role in biosensing applications, enabling biomolecule detection faster and more accurately [7].…”
Section: Introductionmentioning
confidence: 99%
“…Dielectric-modulated (DM) MOSHEMTs work on the modulation of dielectric constants and surface charges, leading to threshold voltage shifts, thereby altering the transconductance of the device [7][8][9]. Normally, embedding biomedical compounds by etching part of the oxide below the gate electrode leads to variation in effective dielectric constant, causing a change in current and paving the way for the detection of biomolecules precisely.…”
Section: Introductionmentioning
confidence: 99%