Dual-Gate Organic Thin-Film Transistor and Multiplexer Chips for the Next Generation of Flexible EG-ISFET Sensor Chips

Abstract

Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. Organic thin-film transistor (OTFT) ISFETs use either small molecules or polymers as semiconductors together with an additive manufacturing process of much lower cost than standard silicon sensors and have the additional advantage of being environmentally friendly. OTFT ISFETs’ drawbacks include limited sensitivity and higher variability. In this paper, we propose a novel design technique for integrating extended-gate OTFT ISFETs (OTFT EG-ISFETs) together with dual-gate OTFT multiplexers (MUXs) made in the same process. The achieved results show that our OTFT ISFET sensors are of the state of the art of the literature. Our microsystem architecture enables switching between the different ISFETs implemented in the chip. In the case of sensors with the same gain, we have a fault-tolerant architecture since we are able to replace the faulty sensor with a fault-free one on the chip. For a chip including sensors with different gains, an external processor can select the sensor with the required sensitivity.

Ditch incorporated organic thin film transistor based organic all-p inverter: a novel approach

“…For organic TFTs, channel thickness (T Channel ) goes from the first monolayer formed at the interface of the OSC-Dielectric to the second monolayer which is usually 1 or 2 nm from the said interface. Besides, there is a non-linear upgradation of contact resistance with upgrading thickness of the organic film which is unlikely for the structures with contacts at the top [13]. Additionally, due to assemblage of gate electrode metal, the structures encounter certain flaws, making BGBC a more endorsed choice [11].…”

“…DG configuration yields better response since bottom gate governs the organic TFT intensely and the rear gate (also called the top gate) escalates V T value linearly owing to its weak coupling with the channel. Also, it acts as a barrier to prevent further deterioration of the performance because of the adverse ambient conditions [13]. Nevertheless, the extra gate fabricated on organic semiconductor contaminates OSC layer.…”