2020
DOI: 10.1002/adfm.202003295
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Dual Interfacial Modification Engineering with 2D MXene Quantum Dots and Copper Sulphide Nanocrystals Enabled High‐Performance Perovskite Solar Cells

Abstract: The performance of perovskite solar cells (PSCs) strongly depends on the electron transport layer (ETL), perovskite absorber, hole transport layer (HTL), and their interfaces. Herein, the first approach to utilize ultrathin 2D titanium‐carbide MXenes (Ti3C2Tx quantum dots, TQD) by engineering the perovskite/TiO2 ETL interface and perovskite absorber and introducing Cu1.8S nanocrystals to perfect the Spiro‐OMeTAD HTL is represented. A significant hysteresis‐free power conversion efficiency improvement from 18.3… Show more

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Cited by 111 publications
(113 citation statements)
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“…For the control device, a stabilized PCE of 20.1% at the maximum power point (0.96 V) is recorded over the same period. Notably, the SnO 2 -cPCN based device has a much faster response of less than 8 s to reach the SPO point than the pristine device (80 s) ascribed to the reduced trap-assisted recombination and the enhancement of electron mobility caused by the incorporation of cPCN [ 53 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…For the control device, a stabilized PCE of 20.1% at the maximum power point (0.96 V) is recorded over the same period. Notably, the SnO 2 -cPCN based device has a much faster response of less than 8 s to reach the SPO point than the pristine device (80 s) ascribed to the reduced trap-assisted recombination and the enhancement of electron mobility caused by the incorporation of cPCN [ 53 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%
“…5 c). Compared with the pristine sample, the PL intensity of SnO 2 -cPCN based perovskite films is much weaker, demonstrating enhanced charge extraction with reduced recombination, leading to increased photocurrents in the PSCs [ 53 ]. For the TRPL spectra in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…According to V TFL = qn t L 2 /2εε 0 , where trap-filled limit voltage (V TFL ) is the voltage kink point, n t is the trap density, L is the perovskite thickness, ε is the relative dielectric constant of CsPbBr 3 , and ε 0 is the vacuum permittivity. The smaller V TFL value indicates the lower trap state density [46]. As shown in Fig.…”
Section: Science China Materialsmentioning
confidence: 89%
“…Very recently, Chen et al first reported employment of ultrathin Ti 3 C 2 T x quantum dots (TQDs) to engineer the CsFAMA (FA: CH(NH 2 ) 2 ) perovskite absorber and the perovskite/TiO 2 ETL interface, as indicated in Fig. 2 e [ 60 ]. Thanks to the improved crystallinity of the perovskite film and the matched energy-level alignment (Fig.…”
Section: Applications Of Mxenes In Solar Cellsmentioning
confidence: 99%