Dual Junction GaInP/GaAs Solar Cell with Enhanced Efficiency Using Type‐A InP Quantum Wells

Abstract

Multijunction solar cells (SCs) have excellent potential to achieve higher efficiency for increased sun concentration. The two-step photon absorption in the quantum wells (QWs) can further enhance the performance of the solar cell. A GaInP/GaAs dual junction solar cell is proposed with InP QWs. The type-A InP QWs are inserted in the intrinsic region of the top cell because in the top cell, short-circuit current governs the overall cell current. The voltage preservation is applied by careful structuring of the p-i-n region at the top cell. The sub-band photon absorption enhances the external and internal quantum efficiency (QE) of the top cell, and both cells have above 90% QEs. The peak efficiencies of 44.09% under 1 sun and 48.18% under 1000 sun concentrations are achieved, and the performance is compared with the available experimental and simulated data.

Optimization of a‐Si Thin‐Film Solar‐Cell Performance with Passivation and c‐Si Cap Layer

“…[26][27][28] Quantum wells are the other techniques, which can be applied to the designed cell for further enhancement of the efficiency. [29][30][31][32] The Table 6 shows the comparison of the designed model with the available a-Si TFSC models.…”

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

“…It can enhance the I SC by sub‐bandgap photon absorption, without significant degradation in the open circuit voltage. [ 43,44 ]…”

“…It can enhance the I SC by sub-bandgap photon absorption, without significant degradation in the open circuit voltage. [43,44] In present work, we have incorporated the type-A InP QWs in the top cell of the DJ structure. The incorporation of the QWs in the top GaInP SC will not only improve the current matching between the two cells, but also it will improve the overall efficiency of the cell.…”