Dual-mode frequency multiplier in graphene-base hot electron transistor

Liang, Bor-Wei; Li, Minfang; Lin, Hung‐Yu; Li, Kai-Shin; Chen, Jyun-Hong; Shieh, Jia-Min; Wu, Chien-Ting; Simbulan, Kristan Bryan; Su, Ching Yuan; Kuan, Chieh-Hsiung; Lan, Yann‐Wen

doi:10.1039/d2nr06285b

Cited by 2 publications

(2 citation statements)

References 39 publications

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“…A detailed analysis and estimation of f α are shown in Figure S11. The lower performance is attributed to the high capacitance brought about by the insulation potential . However, higher-frequency characteristics can be obtained by increasing the conductance, and it is expected that g e over 1000 S/cm 2 levels will acquire frequency characteristics of GHz.…”

Section: Resultsmentioning

confidence: 99%

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Zou

Zhao

et al. 2023

ACS Nano

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To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron transistor (HET) has been proposed. This device has the advantage of high working speed and some complex logic functions can be completed by using one component. Here, we demonstrate a mixed-dimensional HET composed of GaN/AlN microwires, graphene (Gr), and Si. The electrons between GaN/AlN are injected into graphene by an F-N tunneling mechanism to achieve high speed hot electrons, then cross graphene by ballistic transport, and are collected in a nearly lossless manner through a low-barrier Si. Therefore, the device shows a record DC gain of 16.2, a collection efficiency close to the limit of 99.9% based on the graphene hot electron transistor (GHET), an emitter current density of about 68.7 A/cm 2 , and a high on/off current ratio reaching ∼10 7 . Meanwhile, the current saturation range is wide, beyond those of most GHETs. It has potential applications as a power amplifier.

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Section: Resultsmentioning

confidence: 99%

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Zou

Zhao

et al. 2023

ACS Nano

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“…Therefore, a single transistor-based frequency doubler, which utilizes bidirectional current characteristics, has been extensively researched with two-dimensional transition metal dichalcogenides (TDMC), graphene, carbon nanotube (CNT) devices, and tunneling field-effect transistors (TFETs). Due to their ambipolar device characteristics, which can fundamentally eliminate the odd harmonic components in the output signal, there is no requirement for additional filter circuitry [8][9][10][11][12]. For TDMC materials, MoS 2 and WSe 2 are representative n-type and ambipolar semiconductors, which Electronics 2023, 12, 4932 2 of 12 indicate higher mobility values of 200-500 cm 2 V −1 s −1 with good switching characteristics (on-and off-current ratio of 10 8 ).…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping

Kim,

Kim

2023

Electronics

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In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate odd harmonics and the need for extra filter circuitry. The proposed TFET has intrinsically bidirectional and controllable currents that can be implemented by pocket doping, which is located at the junction between the source/drain (S/D) and the channel region, to modify tunneling probabilities. The source-to-channel (ISC) and channel-to-drain currents (ICD) can be independently changed by managing each pocket doping concentration on the source and drain sides (NS,POC and ND,POC). After that, the current matching process was investigated through NS,POC and ND,POC splits, respectively. However, it was found that the optimized doping condition achieved at the device level (namely, a transistor evaluation) is not suitable for a frequency doubler operation because the voltage drop generated by a load resistor in the frequency doubler circuit configuration causes the currents to be unbalanced between ISC and ICD. Therefore, after symmetrical current matching was performed by optimizing NS,POC and ND,POC at the circuit level, it was clearly seen that the output frequency was doubled in comparison to the input sinusoidal signal. In addition, the effects of the S/D and pocket doping variations that can occur during process integration were investigated to determine how much frequency multiplications are affected, and these variations have the immunity of S/D doping and pocket doping length changes. Furthermore, the impact of device scaling with gate length (LG) variations was evaluated. Based on these findings, the proposed frequency doubler is anticipated to offer benefits for circuit design and low-power applications compared to the conventional one.

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Dual-mode frequency multiplier in graphene-base hot electron transistor

Abstract: Since quantum computers have been gradually implemented in countries around the world, the development of many related quantum components that can operate independently with temperature has become more and more...

Cited by 2 publications

References 39 publications

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping

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