Dual-mode RF receiver front-end using a 0.25-µm 60-GHz f
            <sub>T</sub>
            SiGe:C BiCMOS7RF technology

The authors present in this article a dual-standard dual-mode low-noise amplifier (LNA) for DCS1800/W-CDMA-FDD applications. To save die area compared to conventional parallel LNAs, the authors have employed an alternative circuit configuration. It consists of sharing the most die consuming elements (inductances) in both operation standards, enabling a more compact solution. The standard selection is performed through a bias scheme (MOS switches) that allows alternating between the two involved standards. The LNA die area is 1.0 3 1.2 mm 2 and it consumes 6.8 mW (3.8 mA under 1.8 V), including bias circuitry.

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A reconfigurable DCS1800/W-CDMA LNA: Design and implementation issues

Moreira¹,

Kerhervé

Jarry

et al. 2008

Int J RF and Microwave Comp Aid Eng

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Dual-mode RF receiver front-end using a 0.25-µm 60-GHz f _T SiGe:C BiCMOS7RF technology

Cited by 1 publication

References 15 publications

A reconfigurable DCS1800/W-CDMA LNA: Design and implementation issues

A reconfigurable DCS1800/W-CDMA LNA: Design and implementation issues

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Dual-mode RF receiver front-end using a 0.25-µm 60-GHz f T SiGe:C BiCMOS7RF technology

Cited by 1 publication

References 15 publications

A reconfigurable DCS1800/W-CDMA LNA: Design and implementation issues

A reconfigurable DCS1800/W-CDMA LNA: Design and implementation issues

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Product

Resources

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Dual-mode RF receiver front-end using a 0.25-µm 60-GHz f _T SiGe:C BiCMOS7RF technology