Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic

Navarro, C.; Márquez, Carlos; Vilanova, Santiago; Gamiz, F.

doi:10.1109/access.2020.3009967

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…In electronic circuits, logical states are defined as the electrical states within circuit components, which are typically represented by "0" and "1" to indicate the results of logical operations 1,2 . These logical states are realized through engineering of fundamental device structures, such as p-n diodes or metal-oxide-semiconductor field-effect transistors (MOSFETs) 3,4 . Various types of logical gates, such as "AND", "OR", "NAND", "NOT", and "NOR", are used for sophisticated computing tasks by interconnecting individual logical units 5 .…”

Section: Introductionmentioning

confidence: 99%

All-optic logical operations based on the visible-near infrared bipolar optical response

Wang,

You,

Zhang

et al. 2024

Preprint

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The burgeoning need for extensive data processing has sparked enthusiasm for development of a novel optical logic gate platform due to the constraints of current electronic logic gates in achieving precise and rapid computations. In this study, junction field-effect phototransistors based on MoS2/Ge heterojunctions are constructed as optical logic units. This device demonstrates a positive photoresponse that is attributed to the photoconductivity effect occurring upon irradiation with visible light (< 800 nm). Under the illumination of near infrared optics with wavelengths (800-1800 nm) within the communication band, the device shows a negative photoresponse, which is associated with the interlayer exciton effect. A current state of the device can be effectively modulated as different logical states by precisely tuning the wavelength and power density of the optical devices. Within a 3×3 MoS2/Ge phototransistor array, five essentially all-optical logic gates (“AND”, “OR”, “NAND”, “NOT” and “NOR”) can be achieved in every signal unit. Furthermore, three complex all-optical logical operations (Y = A·B + C, Y = A·B + B·C + A·C and Y = A·B + C) are demonstrated by integrating two MoS2/Ge phototransistors in series. Compared to electronic designs, these all-optical logic operations based on the MoS2/Ge phototransistor offer a significant reduction in transistor number, with savings of 50-94% when implementing the abovementioned functions. These results offer valuable insights into the potential of silicon-based optical logical circuits and present opportunities for the development of photonic chips with low power consumption, high fidelity and large volumes.

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Section: Introductionmentioning

confidence: 99%

All-optic logical operations based on the visible-near infrared bipolar optical response

Wang,

You,

Zhang

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…For increasing the forward current, the PG has to be biased at a higher voltage, which causes an increasing potential difference between the CG and the PG when the CG is at low potential or reverse bias, resulting in the generation of leakage and the increase in power consumption, especially when the distance between the PG and the CG is reduced to a deep nanoscale. A complementary doped S/D bidirectional RFET (CD-BRFET) that is with a dual doping source and drain located next to each other is proposed, 19 it significantly reduces the required voltage of the PG, and the on-state current is also improved. However, compared with the mainstream CMOS technology today with only a single gate, the additional PG makes metal interconnection more complicated and difficult.…”

Section: Introductionmentioning

confidence: 99%

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate

et al. 2023

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A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. The drain electrode of the CDS-RSD is not only the output terminal of the current signal but also the input terminal of the voltage signal. Therefore, it is a reconfigurable diode based on high Schottky barriers for both the conduction band and valence band of silicon, which formed on the interface between the silicon and drain electrode. Therefore, the CDS-RSD can be regarded as the simplification of the reconfigurable field effect transistor structure on the premise of retaining the reconfigurable function. The simplified CDS-RSD is more suitable for the improvement of logic gate circuit integration. A brief manufacture process is also proposed. The device performance has been verified through device simulation. The performance of the CDS-RSD as a single-device two-input equivalence logic gate has also been investigated.

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All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response

You,

Han,

Zhang

et al. 2024

Advanced Science

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The burgeoning need for extensive data processing has sparked enthusiasm for the development of a novel optical logic gate platform. In this study, junction field‐effect phototransistors based on molybdenum disulfide/Germanium (MoS2/Ge) heterojunctions are constructed as optical logic units. This device demonstrates a positive photoresponse that is attributed to the photoconductivity effect occurring upon irradiation with visible (Vis) light. Under the illumination of near‐infrared (NIR) optics with wavelengths within the communication band, the device shows a negative photoresponse, which is associated with the interlayer Coulomb interactions. The current state of the device can be effectively modulated as different logical states by precisely tuning the wavelength and power density of the optical. Within a 3 × 3 MoS2/Ge phototransistor array, five essentially all‐optical logic gates (“AND,” “OR,” “NAND,” “NOT,” and “NOR”) can be achieved in every signal unit. Furthermore, three complex all‐optical logical operations are demonstrated by integrating two MoS2/Ge phototransistors in series. Compared to electronic designs, these all‐optical logic devices offer a significant reduction in transistor number, with savings of 50–94% when implementing the above‐mentioned functions. These results present opportunities for the development of photonic chips with low power consumption, high fidelity, and large volumes.

show abstract

Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic

Cited by 11 publications

References 26 publications

All-optic logical operations based on the visible-near infrared bipolar optical response

All-optic logical operations based on the visible-near infrared bipolar optical response

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate

All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response

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