Dual pulsed laser deposition system for the growth of complex materials and heterostructures

Abstract

Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.

Pulsed laser deposition using high-power Nd:YAG laser source operating at its first harmonics: recent approaches and advances

“…Our system -named Dual-PLD -takes advantage of two independent laser sources -namely, an excimer KrF ultraviolet (UV) and a solid-state Nd:YAG infra-red (IR) one -focused on the same target position, thus allowing the deposition of different materials in the form of thin films and/or heterostructures with both the lasers. 12…”

On the origin of the improved hydrogen evolution reaction in Mn- and Co-doped MoS2

“…16 We used the multipurpose PLD facility directly connected to the distribution chamber of the APE beamline to produce and characterize in situ undoped 2H-MoS 2 films and doped with Co (Co-MoS 2 ) and Mn (Mn-MoS 2 ) grown on an Nb:SrTiO 3 (NbSTO) substrate. 17 The in situ transfer technology offered by the NFFA-Trieste allowed measurements by surface sensitive X-ray photoemission (XPS) and X-ray absorption (XAS) techniques avoiding any surface contamination that may affect the sample properties. In this study, we performed resonant photoemission spectroscopy (RESPES) with photon energies across the Mn and Co absorption L-edges, and the Mo M-edge, to study the electronic occupation close to the Fermi level.…”

Uncovering the Lowest Thickness Limit for Room-Temperature Ferromagnetism of Cr1.6Te2

“…Epitaxial Cr 1.6 Te 2 thin films were grown by pulsed laser deposition (PLD) utilizing a Nd:YAG laser source operating at its first harmonics (λ = 1064 nm) falling in the infrared regime. , Such a laser ablates a rotating stoichiometric polycrystalline Cr 1.6 Te 2 target (purity 99.99%) placed at a distance of 9.5 cm from the substrate (Figure a). This mechanism allows for a few-nanometers-thick material to be synthesized with the precision of a single monolayer.…”