Dual-stage microinverter design with a GaN-based interleaved flyback converter stage

Garcia-Rodriguez, Luciano A.; Williams, Ethan Storm; Balda, Juan Carlos; González-Llorente, Jesús; Lindstrom, Esteban O.; Oliva, Alejandro

doi:10.1109/ecce.2013.6647302

Cited by 15 publications

(7 citation statements)

References 11 publications

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“…Equation (8) shows that for the given control method the output current is independent of the input and output voltages.…”

Section: Understanding the Energy Storagementioning

confidence: 99%

“…With the proposed control method, where T t is kept constant and therefore I hb_pp = I hb_h − I hb_l , Equation (8) demonstrates the shift of the transformer T 1 magnetizing current due to the output current.…”

Section: Magnetizing Current Displacementmentioning

confidence: 99%

“…In recent years, new transistor technologies allowing higher switching frequencies have become popular. Examples of these are silicon carbide and GaN MOSFETs [6][7][8]. The use of these new switches in active clamp flybacks seems to be able to solve both of the major limitations of high power density adaptors: Recycling energy from the parasitic elements while reducing the transformer size.…”

Section: Introductionmentioning

confidence: 99%

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Resonant Hybrid Flyback, a New Topology for High Density Power Adaptors

et al. 2018

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In this article, an innovative power adaptor based on the asymmetrical pulse width modulation (PWM) flyback topology will be presented. Its benefits compared to other state-of-the-art topologies, such as the active clamp flyback, are analyzed in detail. It will also describe the control methods to achieve high efficiency and power density using zero-voltage switching (ZVS) and zero-current switching (ZCS) techniques over the full range of the input voltage and the output load, providing comprehensive guidelines for the practical design. Finally, we demonstrate the convenience of the proposed design methods with a 65 W adaptor prototype achieving a peak efficiency of close to 95% and a minimum efficiency of 93.4% at full load over the range of the input voltage, as well as a world-class power density of 22 W/inch3 cased.

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“…Equation (8) shows that for the given control method the output current is independent of the input and output voltages.…”

Section: Understanding the Energy Storagementioning

confidence: 99%

Section: Magnetizing Current Displacementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Resonant Hybrid Flyback, a New Topology for High Density Power Adaptors

et al. 2018

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“…Aggressive development of GaN in large-diameter (up to 200 mm) Si wafers combined with the development CMOS compatible processes has resulted in a cost effective, high performance technology in comparison with SiC-based technology (3,4) . The GaN high electron mobility transistors (HEMTs) are now used in micro-inverters (5,6) . For power switching applications, the enhancement mode (E-mode) devices feature a narrow gate voltage swing, which requires highly accurate control to prevent spikes (7,8) .…”

Section: Introductionmentioning

confidence: 99%

GaN-HEMTs Cascode Switch: Fabrication and Demonstration on Power Conditioning Applications

Cheng

Chou²

2015

The Proceedings of the 2nd International Conference on Industrial Application Engineering 2015

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A novel metal TO-257 4-pin package is proposed for the packaging of a D-mode GaN MIS-HEMTs cascoded with an integrated power MOSFET and a Schottky diode device, and demonstrated in power conversion applications. The normally-off hybrid cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. The cascode configuration has a +3.9 V gate threshold, sufficient voltage swing, good controllability of commonly available gate drivers. Analysis of 48 V/ 2 A power conversion characteristics are discussed and show the excellent switching performance in inductive load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. Experimental results show an output power of 94.8 W and a power efficiency of 95.37 % under a switching frequency of 100 kHz, which is higher than the 92.03% power efficiency provided by the conventional Si MOSFET with the same switching operation.

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“…Power range 10W to 1kW 1kW to 10kW Applications -Point-of-load converters (POL) [5,23,24] -Micro-inverters [28,29,30] -Brick converters [31] -Class D amplifiers [32, 33] -Gate drivers [34] -Data centres [6] -Motor drives [4,3,35] -Battery chargers [36,37] -PV inverters [38,39]…”

Section: Table 21: Variety Of Applications Of Gan Power Transistorsmentioning

confidence: 99%

Modelling of gallium nitride half-bridge converter

Yeo¹

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First and foremost, I'd like to thank God for guiding me through this difficult period of my life and for sending me the right people at the right time. This study would not have been possible if it were not for the guidance and support of people from both Robert Bosch Southeast Asia Private Limited and Nanyang Technological University. On Bosch's side, I'd like to thank the power electronics team and my other colleagues at Robert Bosch, in particular, Dr Pham, who has provided the necessary guidance to hone my programming skills and improve my publication quality. Special thanks also goes out to the other members of Bosch's power electronics team -Jan Riedal, Jitendra Solanki, Nima Saadat, He Maojun and Zaki Mohzani for providing me technical guidance and moral support throughout this study. I'd also like to thank Konstantin Spanos from Robert Bosch's Stuttgart-based power electronics department for introducing me to the basics of device characterisation and for advising on the printed circuit board layouts of both my prototype converters and my switch characterisation equipment. On the University's side, I'd like to thank Professor Tseng King Jet, who has provided insight and advice on device physics as well as which direction to steer my research. I wish him well in his new endeavour at the Singapore Institute of Technology. I'd like to also thank Jennifer from the Electric Power Research Lab for supporting me on administrative issues. Finally, I'd like to thank Professor Ali Maswood, who agreed to take me on after Professor Tseng left to see my study to completion. ContentsAcknowledgements.

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Dual-stage microinverter design with a GaN-based interleaved flyback converter stage

Cited by 15 publications

References 11 publications

Resonant Hybrid Flyback, a New Topology for High Density Power Adaptors

Resonant Hybrid Flyback, a New Topology for High Density Power Adaptors

GaN-HEMTs Cascode Switch: Fabrication and Demonstration on Power Conditioning Applications

Modelling of gallium nitride half-bridge converter

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