Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

Abstract

This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitors, which offers significant advantages over the conventional single-storage-port version without area penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory.