2020 IEEE Energy Conversion Congress and Exposition (ECCE) 2020
DOI: 10.1109/ecce44975.2020.9235714
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Dual Voltage Flyback Topology Operation With Efficiency Enhancers at Dual Voltage Mains

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Cited by 3 publications
(1 citation statement)
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“…However, those parameters also influence the voltage stress on the primary Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-Vdsmax. Accordingly, setting low Dmax (Nr > Np) would result in low voltage stress on the primary switch, but a compressed current pulse with higher conduction losses [16]. Nevertheless, setting high Dmax would create the opposite aspects.…”
Section: Introductionmentioning
confidence: 99%
“…However, those parameters also influence the voltage stress on the primary Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-Vdsmax. Accordingly, setting low Dmax (Nr > Np) would result in low voltage stress on the primary switch, but a compressed current pulse with higher conduction losses [16]. Nevertheless, setting high Dmax would create the opposite aspects.…”
Section: Introductionmentioning
confidence: 99%