Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

doi:10.1364/josab.29.002617

Cited by 6 publications

(2 citation statements)

References 21 publications

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“…Over the past decades, many technologies are introduced to obtain THz radiation, such as Quantum cascade lasers (QCLs), optical heterodyning sources including two DFB lasers, two DBR lasers and external cavity lasers [4][5][6]. Given the compactness, simple fabrication process and possibility of integration, InP-based THz source is highly desired [7][8].…”

Section: Introductionmentioning

confidence: 99%

LATERAL-mode-beating for Terahertz excitation in 1.5-µM DBR laser

Zhang

Pan

et al. 2015

2015 14th International Conference on Optical Communications and Networks (ICOCN)

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We report a Terahertz (THz) excitation source based on a dual-lateral-mode ridge-waveguide Distributed Bragg Reflector laser (DBR) with an optimized 4 μm ridge width in the 1.5-μm range. Dual-lateral-mode generation and beating are verified experimentally. In the experiments, Terahertz signals of 1.133 THz, 1.134 THz, 1.235 THz and 1.24 THz are obtained under different bias conditions. The two wavelengths can be tuned continuously with small strength difference (< 5 dB) and high side-mode suppression ratio ( SMSR > 45 dB).

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Section: Introductionmentioning

confidence: 99%

LATERAL-mode-beating for Terahertz excitation in 1.5-µM DBR laser

Zhang

Pan

et al. 2015

2015 14th International Conference on Optical Communications and Networks (ICOCN)

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“…In order to further enhance the performance of QD-based SOAs, a tapered waveguide, instead of a simple rectangular structure, was proposed. This flared geometry can minimize saturation [2], but can also degrade beam quality due multimode traversal operation. Consequently, the strongly non-Gaussian beam emitted reduces the coupling efficiency to standard single mode fibers (SMF) and thus hinders device integration.…”

mentioning

confidence: 99%

Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality

et al. 2013

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In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam.

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High-power continuous-wave dual-wavelength diode-pumped Yb:YAG slab amplifier with temperature-dependent effects

Shen

et al. 2017

Appl. Phys. B

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Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

Cited by 6 publications

References 21 publications

LATERAL-mode-beating for Terahertz excitation in 1.5-µM DBR laser

LATERAL-mode-beating for Terahertz excitation in 1.5-µM DBR laser

Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality

High-power continuous-wave dual-wavelength diode-pumped Yb:YAG slab amplifier with temperature-dependent effects

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