Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

Lee, Chang-Ju; Kwon, Young-Jin; Won, Chul-Ho; Lee, Jung‐Hee; Hahm, Sung−Ho

doi:10.1063/1.4821133

Cited by 21 publications

(10 citation statements)

References 20 publications

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“…Exposure to UV-A and UV-B radiations can lead to skin aging, pigmentation, skin cancer, cataracts, and other ailments, and hence there is a high demand for UV monitoring sensors. Various UV-sensitive materials and detectors have been reported in the last decade, which include silicon photodetectors , and photoconductive devices and sensors based on ZnO nanostructures, GaN, Ga 2 O 3 , and others. − Zhang et al synthesized high-quality β-Ga 2 O 3 film using the modified metal–organic chemical vapor deposition method and fabricated β-Ga 2 O 3 film-based photodetectors, showing high photoresponsivity and fast response speed . Hossein-Babaei et al reported a Schottky-type UV sensor, including Ag–TiO 2 –Ti structure, exhibiting fast response and recovery time, consuming less than 10 pW of electric power .…”

Section: Introductionmentioning

confidence: 99%

Wearable UV Sensor Based on Carbon Nanotube-Coated Cotton Thread

Kim

Moon

Seol

et al. 2018

ACS Appl. Mater. Interfaces

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A fabric-compatible UV sensor is presented using a cellulose-based thread coated with single-wall carbon nanotube ink. Two-terminal resistive responses of the thread were measured upon exposure to UV, and the effects of intensity, wavelength, and on/off cycling were studied. The sensor was tested in the field under direct sunlight, demonstrating practical usability for a wearable/flexible UV sensor system. The results here confirm the potential for an inexpensive wearable sensor in contrast to the conventional rigid and bulky solid-state detectors.

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Section: Introductionmentioning

confidence: 99%

Wearable UV Sensor Based on Carbon Nanotube-Coated Cotton Thread

Kim

Moon

Seol

et al. 2018

ACS Appl. Mater. Interfaces

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“…UV monitoring sensors utilize the change in conductivity by adsorption/desorption between oxygen molecules and the holes of semiconductor ZnO [117][118][119], gallium nitride (GaN) [120,121], titanium dioxide (TiO 2 ) [122], and CNT [123]. Zhang et al fabricated the Kevlar fiber coated with ZnO nanowires by plasma etching, which directly responded to UV exposure from 0.2 to 1 mW cm −2 [124].…”

Section: Photo-sensing Fibersmentioning

confidence: 99%

Fiber-Based Sensors and Energy Systems for Wearable Electronics

et al. 2021

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Wearable electronics have been receiving increasing attention for the past few decades. Particularly, fiber-based electronics are considered to be ideal for many applications for their flexibility, lightweight, breathability, and comfortability. Furthermore, fibers and fiber-based textiles can be 3D-molded with ease and potentially integrated with everyday clothes or accessories. These properties are especially desired in the fields of bio-related sensors and energy-storage systems. Wearable sensors utilize a tight interface with human skin and clothes for continuous environmental scanning and non-invasive health monitoring. At the same time, their flexible and lightweight properties allow more convenient and user-friendly experiences to the wearers. Similarly, for the wearable devices to be more accessible, it is crucial to incorporate energy harvesting and storage systems into the device themselves, removing the need to attach an external power source. This review summarizes the recent applications of fibers and fiber-based textiles in mechanical, photonic, and biomedical sensors. Pressure and strain sensors and their implementation as electronic skins will be explored, along with other various fiber sensors capable of imaging objects or monitoring safety and health markers. In addition, we attempt to elucidate recent studies in energy-storing fibers and their implication in self-powered and fully wireless wearable devices.

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“…Nitride materials are attractive candidates for various optical applications due to their wide direct bandgaps and highly crystalline qualities following epitaxial growth [ 1 , 2 , 3 ]. In particular, nitride-based semiconductors have been broadly used in important applications such as high-power/high-speed electron devices, visible/UV laser diodes, LEDs, and UV sensors [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

A Schottky-Type Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensor Prepared by Using Selective Annealing

Park

Seol

Hahm

2021

Sensors

Self Cite

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Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performance compared to a non-annealed sensor. Its dark current density at a bias of −2.0 V and UV-to-visible rejection ratio (UVRR) at a bias of −7.0 V were 8.5 × 10−10 A/cm2 and 672, respectively, which are significant improvements over a non-annealed sensor with a dark current density of 1.3 × 10−7 A/cm2 and UVRR of 84, respectively. The results of a transmission electron microscopy analysis demonstrate that the annealing process caused interdiffusion between the metal layers; the contact behavior between Ti/Al/Ni/Au and AlGaN changed from rectifying to ohmic behavior. The findings from an X-ray photoelectron spectroscopy analysis revealed that the O 1s binding energy peak intensity associated with Ga oxide, which causes current leakage from the AlGaN surface, decreased from around 846 to 598 counts/s after selective annealing.

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Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

Cited by 21 publications

References 20 publications

Wearable UV Sensor Based on Carbon Nanotube-Coated Cotton Thread

Wearable UV Sensor Based on Carbon Nanotube-Coated Cotton Thread

Fiber-Based Sensors and Energy Systems for Wearable Electronics

A Schottky-Type Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensor Prepared by Using Selective Annealing

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