2021
DOI: 10.1364/oe.442507
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Dual-wavelength switchable, mid-infrared quantum cascade laser with two shallow-etched distributed Bragg reflectors

Abstract: A dual-wavelength quantum cascade laser (QCL) with two shallow-etched distributed Bragg reflectors is designed and fabricated. Based on a heterogeneous active region within a single waveguide, single-mode emission at 7.6μm and 8.2μm was achieved. The two wavelengths can be independently controlled by selective current injection on different regions of the device, which are electrically isolated. High optical powers of about 275mW and 218mW at room temperature were obtained for the single-mode emission at 7.6μm… Show more

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Cited by 4 publications
(4 citation statements)
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“…The fabrication process of the planarelectrode device was the same as that in Ref. [16]. Finally, the processed wafer was cleaved to 2 mm long laser bars.…”
Section: Device Design and Fabricationmentioning
confidence: 99%
See 2 more Smart Citations
“…The fabrication process of the planarelectrode device was the same as that in Ref. [16]. Finally, the processed wafer was cleaved to 2 mm long laser bars.…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…Moreover, a dual-wavelength mid-infrared QCL can also be used to generate terahertz radiation at room temperature based on intracavity differencefrequency generation [13] . Recently, based on stacking two different active core structures in the same waveguide, several kinds of dual-wavelength single-mode QCLs have been demonstrated [14][15][16] . Jagerska et al [14] developed a dual-wavelength QCL with two electrically separated DFB sections and different grating periods, which allow the two wavelengths to be controlled independently.…”
Section: Introductionmentioning
confidence: 99%
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“…The key factors to achieve dual lasing in a single device are: i) two emitting regions and the partition layer that can be grown seamlessly; and ii) each region can provide sufficient net gain. Currently reported lasers employ two sets of QW regions with one set of shorter wavelength QWs and another set of longer wavelength QWs partitioned by a thin electrical barrier 24 26 , so that the population inversion can be satisfied in two regions simultaneously. In this work, we observe dual-wavelength SiGeSn lasing in the mid IR range under optical pumping.…”
Section: Introductionmentioning
confidence: 99%