Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Zhang, Jianya; Zhou, Min; Bian, Lifeng; Zhao, Yukun; Qin, Hua; Yang, Weishen; Wu, Yuanyuan; Zhang, Xing; Lu, Shulong

doi:10.1039/d1ra02439f

Cited by 14 publications

(10 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with the planar films, the larger surface-to-volume ratio of the NWs could enhance light absorption and generate carriers more easily. [17,19,33] In other words, much more carriers could transport along (Al,Ga)N sidewall than those along (Al,Ga)N top surface. Furthermore, as d 1 > d 2 (Al,Ga)N/GaN core-shell structures exist within the NWs.…”

Section: Resultsmentioning

confidence: 99%

Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires

Jiang

Zhang

Yang

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

electronics, flexible screens, automobile windshield navigation, and IoT (Internet of Things) applications, etc. [1][2] However, the working duration and energy consumption are the key problems that cannot be ignored for the wide applications of optoelectronic devices. Thanks to the ability for long-time working independently without energy consumption, self-powered photodetectors (PDs) can be the indispensable devices to make the detection systems economical and simple. [2,4,6] As the crucial components in the detection system, ultraviolet (UV) PDs are required for the wide applications in UV communication, fire warning, high-voltage corona detection, and ozone-hole monitoring. [1][2] Therefore, self-powered UV PDs with high flexibility and invisible functionality are pretty promising and necessary for the nextgeneration optoelectronic devices.Up to now, some research groups have developed the labor-less self-assembly approaches of fabricating the PDs and sensors requiring low power consumption. [7][8][9] For instance, Nasiri et al. reported a fully transparent ZnO PD with a gigantic photo-to-dark current ratio of 9.3 × 10 6 based on structural engineering. [7] With a self-assembly SnO 2 −graphene oxide nanoheterojunctions, Pargoletti et al. fabricated a room-temperature chemical sensor with an excellent UV light responsivity of 400 A W −1 . [9] Flexible self-powered ultraviolet (UV) photodetectors (PDs) with an invisible functionality are essential but challenging to be fabricated for the applications of next-generation optoelectronic devices. In this work, a flexible photo electrochemical (PEC) (Al,Ga)N PD with three excellent characteristics, which are the ultrahigh UV/visible reject ratio, ultrahigh detectivity, and transmissivity, is proposed and demonstrated successfully. By numerical simulations, it is also found that the cross-sectional absorption area should be a nonignorable factor affecting the photogenerated current under bending states. After continuous long-time working or preserving, the PD performance can keep quite stable. Thanks to the pretty thin bending section of GaN connecting layer, the piezoelectric charges generated by stress are proposed to have only a limited effect in the energy band and photocurrent density. Therefore, when bending or twisting the PD at a high degree for many times, both the stable on-off switching characteristics and photocurrent densities can still be achieved. With the demonstrated ultrahigh detectivity and stability of flexibility, this PD would enable a broad range of optoelectronic applications, including omnidirectional UV detection and wearable intelligent sensors.

show abstract

Section: Resultsmentioning

confidence: 99%

Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires

Jiang

Zhang

Yang

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

show abstract

“…To characterize the composition of the In component, a photoluminescence (PL) curve is illustrated in Figure 3a, which had a peak of ~590 nm. The In composition was calculated by Vegard's law [6]. The band gap of InN was 0.7 eV and that of GaN was 3.4 eV [6].…”

Section: Resultsmentioning

confidence: 99%

“…The In composition was calculated by Vegard's law [6]. The band gap of InN was 0.7 eV and that of GaN was 3.4 eV [6]. The bowing parameter of (In,Ga)N is often selected as 1.43 eV.…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that seawater has a low attenuation of light waves in the wavelength range from 450 to 550 nm, i.e., the blue-green light transmission window [2,4,5]. Furthermore, the band gap of (In,Ga)N is direct and adjustable, which can cover the wavelength range from 365 to 1700 nm [6]. That means (In,Ga)N with appropriate In composition can be used for underwater communication.…”

Section: Introductionmentioning

confidence: 99%

“…Current available (In,Ga)N PDs are mostly fabricated based on thin film and bulk materials [6]. Compared with thin films or bulk materials, nanostructures such as nanowires (NWs) have the ability to significantly increase the optical absorption and photogenerated carrier density due to the larger surface-to-volume ratio [6,9]. Moreover, NWs have higher transparency compared to the films with the same thickness [7,10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

et al. 2021

Self Cite

View full text Add to dashboard Cite

Underwater wireless optical communication (UWOC) is a wireless communication technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work has proposed and successfully demonstrated a self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD is critical for 360° omnidirectional underwater detection, which was realized by detaching the (In,Ga)N nanowires from the opaque epitaxial substrates to the indium tin oxide (ITO)/glass. It was also found that the insulating SiO2 layer can enhance the photocurrent by about 12 times. The core–shell structure of the nanowires is beneficial for generating carriers and contributing to the photocurrent. Furthermore, a communication system with ASCII code is set to demonstrate the PD detection in underwater communication. This work paves an effective way to develop 360° omnidirectional PDs for the wide applications in UWOC system and underwater photodetection.

show abstract

High-performance self-powered UV photodetector based on CuI/CsCu2I3/GaN heterojunction

Zhou

Wang

Luo

et al. 2022

Chemical Engineering Journal

View full text Add to dashboard Cite

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Abstract: A dual-wavelength (blue/red) photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully, which is promising for wide applications. The rise time of the response can reach 3.5 ms.

Cited by 14 publications

References 40 publications

Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires

Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

High-performance self-powered UV photodetector based on CuI/CsCu2I3/GaN heterojunction

Contact Info

Product

Resources

About