Ductile‐Metal Ag as Buffer Layer for Flexible Self‐Powered Ag₂S Photodetectors

Abstract

The rigid nature of inorganic semiconductors makes them rarely use in flexible devices till now. For the first time, ductile‐metal Ag is used as buffering layer to bond the inorganic semiconductor thin films and polymer substrate forming a sandwich structure, which has outstanding flexible photoelectric character. The ductile thin Ag layer under Ag2S thin film acts as electrode and buffering material between the Ag2S and polyimide (PI) layers. The strong bonding interaction between Ag2S and Ag can reduce the stress force in Ag2S thin films that is generated during bending, which enhances its flexibility. The resulted Ag2S/Ag/PI film shows excellent electrical performance retentivity. After more than 104 cycles bending test, the conductivity of the Ag2S/Ag/PI films has almost not changed. The prepared Au/PEDOT:PSS/Ag2S/Ag/PI photodetectors are stable in air or N2. It can bear a small bending radius as low as 1.5 mm for ≈4000 bending cycles test without drastic performance decay. In addition, the Ag2S/Ag based flexible photodetectors show a wide spectral response from ultraviolet to near infrared.

Flexible hybrid photodetector based on silver sulfide nanoparticles and multi-walled carbon nanotubes

“…However, despite the ductile properties of Ag 2 S film, the thin layer based on only Ag 2 S NPs was fractured easily under bending conditions due to the poor interface adhesion. 14 To solve this issue, we synthesized Ag 2 S on CNTs with excellent mechanical stability and electrical conductivity, and prepared hybrid layers consisted of Ag 2 S NPs and CNTs.…”

A Fully Flexible Intelligent Thermal Touch Panel Based on Intrinsically Plastic Ag2S Semiconductor

“…[1][2][3][4][5][6][7] Wearable touch panel is one type of flexible electronics to recognize and feed back finger touch, which has intrigued great interest flexibility that can be compressed or twisted into any shape. [21][22][23] In addition, its electrical resistivity can be tuned in the range of a few orders with the values from near the edge of insulations to the region of heavily doped semiconductors. Accordingly, full-inorganic thermoelectric materials and devices are developed with the output power density orders of larger than that made of organic materials.…”

High-Responsivity Vis–NIR Photodetector Based on a Ag2S/CsPbBr3 Heterojunction

“…Roshan et al 9 reported a NIR photodetector based on Ag 2 S with high detectivity. Lei et al 11 prepared flexible selfpowered Ag 2 S photodetectors. However, the performance of Ag 2 S PDs needs to be improved.…”