Dy-doped Lu2SiO5 single crystal: spectroscopic characteristics and luminescence dynamics

Dominiak‐Dzik, G.; Ryba‐Romanowski, W.; Lisiecki, Radosław; Solarz, P.; Berkowski, M.

doi:10.1007/s00340-009-3852-x

Cited by 48 publications

(37 citation statements)

References 21 publications

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“…same for both sites like in the LSO:Dy crystal 6 and unlike in GSO:Dy one. 5 The initial nonexponential stages of the recorded decays, arising from the static quenching with the Forster-like time dependence, and concentration variations of luminescence decays point out a significant role of nonradiative energy transfer by Dy 3þ -Dy 3þ interactions.…”

Section: Resultsmentioning

confidence: 76%

“…A detailed spectroscopic analysis of Dy 3þ in the GSO and LSO hosts has been reported in our previous papers. 5,6 The presence of the gadolinium lines in excitation spectra of Dy 3þ emission indicates an efficient energy transfer between ions. Spectral positions of observed bands are nearly the same for all studied crystals.…”

Section: Resultsmentioning

confidence: 99%

“…The structural, optical, kinetic, and dielectric properties of LGSO:Dy were examined at low and room temperature and discussed with the reference to those of GSO:Dy and LSO:Dy reported in our previous papers. 5,6 …”

Section: Introductionmentioning

confidence: 99%

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The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Dominiak‐Dzik

Ryba‐Romanowski

Lisiecki

et al. 2010

Crystal Growth & Design

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The Czochralski growth of Dy 3þ -doped (Lu 1-x Gd x ) 2 SiO 5 solid solution single crystals with different mixtures of Lu 2 SiO 5 and Gd 2 SiO 5 oxides (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) is reported. It was found that the (Lu 1-x Gd x ) 2 SiO 5 crystals retain structural, physical, and optical properties of Lu 2 SiO 5 even for x = 0.8. Optical investigation of Dy:(Lu 1-x Gd x ) 2 SiO 5 revealed that the structural disorder of the host brings about a strong inhomogeneous broadening of Dy 3þ spectral bands while influencing weakly rates of its radiative and nonradiative transitions. Dielectric characteristics of solid solution crystals are presented and discussed. Finally, (Lu 1-x Gd x ) 2 SiO 5 solid solution crystals seem to be an attractive alternative to a Lu 2 SiO 5 host for the design of novel phosphors, radiation converters, and lasers owing to a significantly lower melting temperature and hence easier and less expensive manufacturing.

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

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The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Dominiak‐Dzik

Ryba‐Romanowski

Lisiecki

et al. 2010

Crystal Growth & Design

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“…Later on, numerous papers were devoted to spectroscopic investigation of oxyorthosilicate crystals doped with various rare earth ions, e.g. Pr 3+ [3], Dy 3+ [4,5], Eu 3+ [6,7], Sm 3+ [8], or Tm 3+ [9]. When doped with ytterbium ions the LSO crystal proved to be a promising laser material emitting in near infrared [10,11].…”

Section: Introductionmentioning

confidence: 99%

Effect of substitution of lutetium by gadolinium on emission characteristics of (Lu_xGd_1-x)_2SiO_5: Sm^3+ single crystals

Ryba‐Romanowski¹,

Strzęp²,

Lisiecki³

et al. 2014

Opt. Mater. Express

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Single crystals of (Lu x Gd 1-x ) 2 SiO 5 :Sm (0.5 at%) with x = 0.19 (81% Gd3+) and x = 0.11 (89% Gd 3+ ) belonging respectively to the C2/c and P2 1 /c space groups were grown by the Czochralski method under nitrogen atmosphere. Detailed investigation of their spectroscopic properties were performed with the aim of understanding the effect of structural modification on emission characteristics of incorporated Sm 3+ ions with a special attention directed to a laser potential associated with yellow emission line. It was inferred from low temperature optical spectra that almost all emission intensity in the host with C2/c symmetry comes from one of two available Sm 3+ sites, whereas two Sm 3+ sites contribute to emission in the host with P2 1 /c symmetry. Excitation spectra of Sm 3+ emission recorded in the VUV-UV region between 100 nm and 350 nm made it possible to locate the energy of CT transition at about 6.11 eV and to assess the low energy limit for the 4f 5 → 4f 4 5d 1 transitions of Sm 3+ to about 6.81 eV. It implies that in the two systems studied these energies are advantageously high thereby preventing the contribution of intense allowed transitions to an adverse excited state absorption of both blue pump radiation and yellow emission. Experiments of optical amplification of yellow emission were performed employing a pump-and-probe technique in order to verify this implication. It was found that for a LGSO:Sm 3+ crystal having the C2/c symmetry an increase of the pump power density from 20 mJ/cm 2 to 50 mJ/cm 2 at a constant power probe density of 150 μW/cm 2 brings about a positive gain growing from about 0.25 to 2 [cm −1 ]. In the same conditions a maximum gain value of 1 cm −1 was measured for LGSO:Sm 3+ crystal having the P2 1 /c symmetry. It was concluded that the former system is promising for the design of all-solid-state yellow lasers. 85-93 (2012). 9. C. Li, R. Moncorge, J. C. Souriau, C. Borel, and Ch. Wyon, "Efficient 2.05 μm room temperature Y 2 SiO 5 :Tm 3+ cw laser," Opt. Commun. 101(5-6), 356-360 (1993). 10. C. Yan, G. Zhao, L. Su, X. Xu, L. Hang, and J. Xu, ""Growth and spectroscopic characteristics of Yb:GSO single crystal," J. Phys. Condens. Matter 18(4), 1325-1333 (2006). 11. M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B.

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“…It is well known, that the oxygen vacancies at non-bounded chains between Lu1 and Lu2 positions of LSO host [26] are responsible for large afterglow of LSO:Ce crystals and decrease of their scintillation LY [16,21]. Therefore, we expect that in the case of the elimination or strong decreasing the influence of Pb 2+ flux impurity on luminescence of Ce 3+ ions in LSO:Ce SCF, one could possess even better scintillation properties in comparison with SC counterpart.…”

Section: Pbmentioning

confidence: 99%

Growth and luminescent properties of Lu₂SiO₅and Lu₂SiO₅:Ce single crystalline films

Zorenko

Nikl

Gorbenko

et al. 2010

IOP Conf. Ser.: Mater. Sci. Eng.

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Dy-doped Lu2SiO5 single crystal: spectroscopic characteristics and luminescence dynamics

Cited by 48 publications

References 21 publications

The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Effect of substitution of lutetium by gadolinium on emission characteristics of (Lu_xGd_1-x)_2SiO_5: Sm^3+ single crystals

Growth and luminescent properties of Lu₂SiO₅and Lu₂SiO₅:Ce single crystalline films

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Dy-doped Lu2SiO5 single crystal: spectroscopic characteristics and luminescence dynamics

Cited by 48 publications

References 21 publications

The Czochralski Growth of (Lu1−xGdx)2SiO5:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

The Czochralski Growth of (Lu1−xGdx)2SiO5:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Effect of substitution of lutetium by gadolinium on emission characteristics of (Lu_xGd_1-x)_2SiO_5: Sm^3+ single crystals

Growth and luminescent properties of Lu2SiO5and Lu2SiO5:Ce single crystalline films

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The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

The Czochralski Growth of (Lu_1−xGd_x)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Growth and luminescent properties of Lu₂SiO₅and Lu₂SiO₅:Ce single crystalline films