2008
DOI: 10.1109/lpt.2008.925195
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Dynamic Analysis of High-Power and High-Speed Near-Ballistic Unitraveling Carrier Photodiodes at $W$-Band

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Cited by 37 publications
(14 citation statements)
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“…However, during photodiode operation, photogenerated holes with slow drift velocity are always a major factor limiting speed. The 'slow' hole problem is eliminated in the InP-based UTC photodiode structure [ Normalized to spiral antenna output UTC (NBUTC) photodiodes [56][57][58][72][73][74], where only electrons with high drift velocity act as active carriers. Figure 6 shows conceptual band diagrams for p-i-n, UTC and NBUTC photodiodes.…”
Section: Millimeter-wave Photonic Transmittersmentioning
confidence: 99%
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“…However, during photodiode operation, photogenerated holes with slow drift velocity are always a major factor limiting speed. The 'slow' hole problem is eliminated in the InP-based UTC photodiode structure [ Normalized to spiral antenna output UTC (NBUTC) photodiodes [56][57][58][72][73][74], where only electrons with high drift velocity act as active carriers. Figure 6 shows conceptual band diagrams for p-i-n, UTC and NBUTC photodiodes.…”
Section: Millimeter-wave Photonic Transmittersmentioning
confidence: 99%
“…This leads to a significant improvement in the effective carrier drift velocity of the photodiode during operation and excellent SCBP performance [28,70,71]. The major difference between the UTC photodiode and the NBUTC photodiode is the insertion of an additional p-type charge layer in the collector layer to control the distribution of the internal electrical field, which results in an over-shoot of the electron drift velocity even under high reverse bias voltage (-3 V) [56][57][58][71][72][73][74]. Figure 6(c) shows a conceptual band diagram for an NBUTC photodiode.…”
Section: Millimeter-wave Photonic Transmittersmentioning
confidence: 99%
“…The demonstrated transmitter comprises broadband front-end circuitry and the traditional waveguide-based horn antenna fed by a dipole-based structure for the realization of the directional radiation from the integrated photonic transmitter. The antenna feed structure is planar in nature and poised for easy integration with a near-ballistic uni-traveling carrier photodiode (NBUTC-PD) [11], [12] via a flip-chip bonding technique. Indeed, compared to the related past works [23]- [26], the proposed waveguide feed does not require any modifications to the waveguide connected to the horn antenna, as well as bond wires on the feed structure, which appears to be critical to a relatively easy and low-cost front-end implementation.…”
Section: Introductionmentioning
confidence: 99%
“…Compared with the UTC-PD-based optoelectronic 0741-3106/$26.00 © 2009 IEEE (OE) mixer [5], [6], our NBUTC-PD-based OE mixer has an improved modulation bandwidth even under a higher operation current, due to the elimination of the forward bias operation [5], [6]. More details of these components can be found in our previous work [7]- [10]. The employed quasi-Yagi radiator discussed herein is comprised of a half-wavelength dipole element and a ground reflector.…”
Section: Introductionmentioning
confidence: 99%
“…Its 3-dB bandwidth far exceeds 110 GHz under a high (> 3 V) reverse bias voltage. By utilizing the device modeling technique [10], [12], we can further extract the O-E frequency response, which is indicated by the solid line in Fig. 2(a).…”
Section: Introductionmentioning
confidence: 99%