Dynamic behaviour of semiconductor lasers

Boers, P.M.; Vlaardingerbroek, Marinus T.; Danielsen, M.

doi:10.1049/el:19750157

Cited by 121 publications

(25 citation statements)

References 5 publications

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“…As j increases, the steady state first moves along the n-axis, and then, above threshold, along the line n = 1, by (3). The flow is directed away from the initial point N* = 0, n" = {-' , as indicated in Fig.…”

Section: Analytical Solutionsmentioning

confidence: 91%

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Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection

Schöll

Bimberg

Schumacher

et al. 1984

IEEE J. Quantum Electron.

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Abstract-The kinetics of generating ultrashort light pulses by gain switching unbiased semiconductor lasers emitting relaxation oscillations is theoretically modeled and described using phase portraits. Biomolecular recombination processes and realistic injection current pulse shapes are incorporated in the model. Approximate analytical solutions of the rate equations are derived for high current injection. Laser pulse widths, pulse peak power, electrical to optical pulse delay times, and time difference to subsequent relaxation oscillations are computed. Their dependence on injection current to threshold current density ratio (J/Jt) and on material and laser design parameters is explicitly derived and is in good agreement with experiment. In particular the remarkable observation that the laser pulse width is broadly independent of the injection current rise and fall time can thus be understood.

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Section: Analytical Solutionsmentioning

confidence: 91%

“…Hence, the successive, if any oscillations are centered around phase points to be labeled (n", N"). Successively smaller N" are found according to (3) below. The peaks of these successive oscillations are the more pronounced the larger io, and the slower the current fall time tf is.…”

Section: Introduction Imentioning

confidence: 99%

Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection

Schöll

Bimberg

Schumacher

et al. 1984

IEEE J. Quantum Electron.

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“…The efficiency of laser output by the injection current modulation is constant for a small to moderate modulation index when the modulation frequency is less than the relaxation oscillation frequency. On the other hand, the modulation efficiency is greatly degraded over the frequency of the relaxation oscillation and the modulation for the light output over that frequency is not possible (Boers and Vlaardinerbrek 1975;Furuya et al 1979). The effort to enhance relaxation oscillation frequency of semiconductor lasers has been made to device high efficiency lasers in practical use (Lau and Yariv 1985;Uomi et al 1985).…”

Section: Injection Current Modulationmentioning

confidence: 99%

Semiconductor Lasers and Theory

Ohtsubo

2012

Springer Series in Optical Sciences

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In this chapter, we discuss the oscillation conditions for semiconductor lasers and, then, derive the rate equations, which are the starting points of the study of chaotic dynamics in semiconductor lasers. The semiconductor laser described here is a Fabry-Perot type with a mono-layer of the active region, however other narrow-stripe edge-emitting lasers such as multi-quantum well (MQW) lasers and distributed feedback (DFB) lasers can be theoretically treated in the same manner as Fabry-Perot lasers. Therefore, the macroscopic features of these lasers show the same behaviors from the viewpoint of chaotic dynamics, although the detailed characteristics strongly depend on the laser structure and the particular values of the device parameters. The relaxation oscillation frequency, which is calculated from the rate equations plays an important role for the dynamics of semiconductor lasers. The Langevin terms, which are stochastic noise effects, are introduced in the rate equations. Some other fundamental characteristics of semiconductor lasers are also discussed.

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“…A current pulse AJ(t), sufficiently high to give ringings [5], is superposed on J o . The electron density n now describes an oscillating curve with a maximum and a minimum (Fig.…”

Section: The Modulation Formmentioning

confidence: 99%

A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

Danielsen

1976

IEEE J. Quantum Electron.

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Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Danielsen, M. (1976). A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers. I E E E Journal of Quantum Electronics, 12(11), 657-660.IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. QE-12, NO. 11,NOVEMBER 1976 657 A Theoretical Analysis for GigabitAecond Pulse Code Modulation of Semiconductor LasersAbstract-Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing hansients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple analytical expressions. Also, simple approximate formulas for the light pulse maximum, width, delay, and integrated values are given. INTRODUCTIONP ULSE modulation of a semiconductor laser presents three problems [1]-[SI, when high bit rates are required: a time delay between the applied current pulse and the light pulse, ringing transients, and the charge-storage effect of preceding pulses on the light pulse form and magnitude.This work presents a pulse modulation model which avoids these disadvantages. A dc-bias current near threshold reduces the delay. The first spike of the ringings is suggested to be exploited as a light pulse. This is done by switching off the current pulse immediately after the light pulse appeared. The influence of the charge storage, making the height of the photon pulses dependent on preceding pulses, is overcome by giving the height and duration of the applied current pulses such values that the electron and photon densities return to the start values at the end of the pulse. This makes the start condition identical for each pulse.Numerical solutions show that the detailed current pulse form is not significant. Only the charge delivered by the current has to fulfill some requirements. Analytical formulas, derived for square current pulses, are therefore at least qualitatively applicable for a wide range of pulse forms.The following analysis is based on the rate equations including spontaneous emission as reported in [ 51 ,where n, J , S electron, current, and photon densities, respectively; d active layer thickness; e electronic charge;T~, rp electron and photon lifetimes. The gain of the laser is g = a(n -No) [SI ,[6] , where No and cx are constants. The factor 0 is the fraction of spontaneous light that goes into the the lasing modes. In [7] it has been shown that the spectrum of a narrow pulse is determined by the dc bias, and is almost independent of the current pulse height.Therefore fi is taken to depend on the prebias current only and to be constant during a pulse. The value of 0 is estimated to be of the order of when one mode is active, and is taken to be proportional to the number of active modes [8].For simplicity, effects like mode locking, mode coupling, Qswitching, electron diffusion, and circuit parasitics have been disregarded in this analysis. T...

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Dynamic behaviour of semiconductor lasers

Cited by 121 publications

References 5 publications

Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection

Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection

Semiconductor Lasers and Theory

A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

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