Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects

Abstract

This paper presents a compact model of the diode reverse recovery effect for the simulation program with integrated circuit emphasis (SPICE) simulation. We found that the reverse recovery effect can be described with the dynamic carrier distribution within the lightly-doped N- drift layer of a p–i–n power diode. The proposed model is verified with two-dimensional (2D) device simulation results and compared with a lumped-charge-based conventional model.