Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory

Wang, Jer‐Chyi; Lin, Chih-Min; Chen, Chia-Hsin; Huang, Po Chin; Lai, Chao−Sung

doi:10.1143/apex.5.044201

Cited by 2 publications

(1 citation statement)

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“…One of the popular candidate methods is the adoption of nanocrystals (NCs) as the discrete charge storage islands for suppressing lateral electron migration in the charge storage layer. [1][2][3][4][5][6][7][8][9][10] The concept of charge storage in the discrete islands can realize a better retention time even for a thin tunneling oxide. However, there is a trade-off between charge retention time and program or erase speed for NC-based memories.…”

Section: Introductionmentioning

confidence: 99%

Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application

Lin

Wang

Huang

et al. 2013

Jpn. J. Appl. Phys.

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The annealing effects on the gold nanocrystal (Au-NC) formation for memory application are proposed. At higher annealing temperatures, the memory window becomes larger owing to the high density of Au-NCs. The average size of the Au-NCs is approximately 5 nm, and the spaces between NCs tend to decrease with annealing temperature. Furthermore, the retention charge loss rate was optimized at 700 °C annealing formation and found to be dominated by the thermally activated and tunneling mechanisms. The high charge loss rate for the thermally activated mechanism shows no dependence on annealing temperature, while the low charge loss rate for the tunneling depends on the spaces between NCs. Besides, the activation energy of the thermally activated electron loss was low at a high Au-NC density, which can be attributed to the lateral electron migration between NCs. The endurance of the 700 °C annealed sample can sustain a memory window of approximately 1.1 V after 104 program/erase cycles.

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