Dynamic conductance characteristics in HfO_x-based resistive random access memory

Abstract

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

“…[1][2][3][4] Alternately, electrical resistance switch-based memory (RRAM) has attracted intense research interest as a promising candidate for use in next-generation non-volatile memory due to its high scalability down to a few nanometers and high-density integration with CMOS technology. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Conventional devices consist of a metal-insulator-metal (MIM) structure, with insulator resistance switching caused by the diffusion of oxygen vacancies/defects, charge carrier trapping and de-trapping, and Schottky barrier modulation to produce the memory effect. 5 Even though many dielectric materials such as HfO x (ref.…”

“…3) and TaO x , 6 and non-stoichiometric SiO x (ref. 16 and 18) can be used as resistive switching materials, SiN x -based RRAM also shows good resistive switching performance in terms of its operating power, switching speed, and reliability. [23][24][25][26][27][28][29][30] Meanwhile, a device composed of a metal-insulator-silicon (MIS) structure is more exible in terms of its resistive switching properties.…”

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

“…Therefore, RRAM devices with dielectric layers annealed at 225 °C, 250 °C, 275 °C were considered for further evaluation. Compared with unipolar I-V characteristics of other RRAM devices [47], all RRAM devices with Al/Ni/solution-based AlO x /Pt structure demonstrate typical bipolar I-V characteristics without forming operation. The current compliance (CC) is set at 1 mA to prevent catastrophic breakdown of the RRAM devices.…”

NiO-Based Electronic Flexible Devices

“…The former operates at a set voltage of 2.2 V and reset voltage at −2.2 V, the latter at a set voltage of 0.8 V and reset voltage at −1.1 V. Unipolar ReRAM are more difficult to achieve. Some examples are provided by Al/HfO x /Al (set voltage 1.8 V, reset voltage 0.8 V) [127] and Pt/ZnO/Pt (set voltage 1.1-2.3 V, reset voltage 0.4-1 V) [128]. The issue of flexibility of ReRAM, however, is difficult to tackle, also due to the necessity of incorporating the electrodes in the device.…”