MITSUKO ONODA, MASANOBU SAEKI AND ISAO KAWADA 957 easier than that of the fully occupied Ti layer. It is probable that the stacking faults which occur at a low temperature such as 683 K are due only to the slide between the sandwiches, and the experimental data shown in Fig. 1 should be interpreted appropriately on the basis of the extended model.Experimental patterns which suggest the occurrence of stacking faults are often observed for the various temperatures and compositions in the Ti-S system. The method of analysis of the structure with stacking faults described above may be effectively used for considering the phase-relation problem in this system. The effect of dynamic deformation on the Debye-Waller factor of silicon and, to a slightly lesser extent, the other three elements, is investigated. The Debye-Waller factor for the shells only in the the shell models is calculated. The effect introduced by dynamic deformation whereby the Debye-Waller B value varies with scattering vector K is evaluated. Finally, the anisotropic Debye-Waller factor components for the bond charges are calculated for all four elements. It is found that the bond charges in the bond-charge model and the shells in the shell model vibrate substantially less than the main atomic cores. It is concluded that if the models are at all realistic then the effects of dynamic deformation on the Debye-Waller factors of these elements should be seriously considered.