Dynamic Electrical Characteristics of 4H-SiC Drift Step Recovery Diodes of High Voltage

Yang, Zhousheng; Liang, Lin; Yan, Xiaoxue

doi:10.1109/tps.2022.3164752

Cited by 9 publications

(1 citation statement)

References 26 publications

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“…The measured rise time of the output pulse was 1.011 ns, and the amplitude was 2.302 kV. By adjusting the DC bias voltage of the input circuit, they found that the amplitude and rise time of the output voltage of the device increase with the increase in the DC bias voltage [17].…”

Section: Introductionmentioning

confidence: 98%

Collaborative Design of Pulsed-Power Generator Based on SiC Drift Step Recovery Diode

Guo,

Chen,

Zhang

et al. 2024

Electronics

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Despite the extensively researched physical principles, numerous published simulations on SiC drift step recovery diodes (SiC DSRD) and the practical implementation of SiC DSRD-based pulses, there are few kinds of research focusing on collaborative design between a SiC DSRD and its driving circuit. In this paper, a collaborative design method of a SiC DSRD and its driving circuit are presented. In addition, a detailed simulation is conducted to verify design considerations and to analyze the impact of driving parameter changes on the output pulse waveform. A pulse generator prototype with a self-developed SiC DSRD is implemented. The experimental results show that the circuit can output a peak voltage of 790 V on a matching load of 50 Ω, with a rise time of 520 ps (20%~80%), and can work at a 1 MHz repetition frequency rate with good stability.

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Section: Introductionmentioning

confidence: 98%