Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

Wang, Bixuan; Zhang, Ruizhe; Wang, Hengyu; He, Q.; Song, Qihao; Li, Qiang; Udrea, F.; Zhang, Yuhao

doi:10.1109/led.2022.3227091

Cited by 17 publications

(9 citation statements)

References 26 publications

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“…34) Meanwhile, gate ruggedness is also important for power transistors. 74) The ruggedness is a critical concern for Ga As most ruggedness involves the electrothermal, transient, non-equilibrium process, it has to be characterized on largearea, packaged devices in circuit tests. The measurement results for on-wafer, small-area devices are usually less meaningful, as there are no straightforward scaling laws to use these results to project the ruggedness of practical devices.…”

Section: Ruggednessmentioning

confidence: 99%

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Qin

Wang

et al. 2023

Jpn. J. Appl. Phys.

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Benefitted from progress on the large-diameter Ga2O3 wafers and Ga2O3 processing techniques, the Ga2O3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga2O3 power devices have emerged globally, and the scope of these works has gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga2O3 at a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state of the art of the ampere-class Ga2O3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.

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Section: Ruggednessmentioning

confidence: 99%

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Qin

Wang

et al. 2023

Jpn. J. Appl. Phys.

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“…This may lead to the inapplicability of the gate lifetime obtained from DC tests to device operations in power converters. Recently, a circuit method is proposed to evaluate the gate lifetime under the inductive load switching [225], the condition of which is not accessible by DC or pulse I-V methods. As the parasiticinduced gate overshoot has a resonance nature, this method features a resonance-like gate ringing with the pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop.…”

Section: A Gate Lifetimementioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

111

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Several phenomena can lead gate-source (or source sensing, if applicable) to hazardous voltage ringing and overshoots. Depending on the amplitude of the oscillations, the component is degraded at varying speeds [2]. An application-scale consequence is the false turn-off; upon switching on, the gate voltage oscillates lower than its threshold, causing undesired, partial switching [3].…”

Section: Gan Hemts Gate Overvoltages: Origins Characterization Conseq...mentioning

confidence: 99%

Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

Roche,

Trémouilles,

Marcault

et al. 2023

2023 IEEE 10th Workshop on Wide Bandgap Power Devices &Amp; Applications (WiPDA)

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In the field of transient tolerance tests, few studies have been conducted on gate voltage spikes of GaN HEMT components. A parametric generation of such overvoltage either implies precise and tedious hardware gate circuitry design, or require some simplification of the waveform making it less representative of actual and practical cases.Such tests will be easier to conduct thanks to the original 50 Ohms environment setup proposed in this work. This original test bench improves usual measurement bandwidths. It also allows spatial isolation of a tested device with its driver and power circuits (e.g. over one meter), limiting their complex interactions.As a first demonstration of the setup capability, the breakdown overvoltage of a p-GaN HEMT is determined. Several gate voltage overshoots as high as twice the DUT nominal rating are then demonstrated not to degrade the tested device. Moreover, allowing such overshoots may enable to significantly reduce switching losses.

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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

Cited by 17 publications

References 26 publications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

Cited by 17 publications

References 26 publications

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

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Product

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Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications