Dynamic model for e-beam irradiation of MOS capacitors

Churchill, J.N.; Holmstrom, F.E.; Collins, T.

doi:10.1063/1.326478

Cited by 18 publications

(9 citation statements)

References 13 publications

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“…Whether or not the oxide thicknesses or the initial substrate materials are, in some way, related to the observed differences is unknown. These factors may be significant if charge diffusion (26) and/or intrinsic or extrinsic defects are important to the recombination process.…”

Section: Analysis and Discussionmentioning

confidence: 99%

Photon Energy Dependence of Radiation Effects in MOS Structures

Dozier

Brown

1980

IEEE Trans. Nucl. Sci.

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MOS capacitors with oxide thicknesses of 750R, 3500A and 6000R were irradiated using a Co60 source and a Cu target x-ray tube. At low fields across the oxides (lMV/cm) the differences disappear. The observations are interpreted to be due to differences in the electron-hole recombination dynamics for the two radiation energies. Additionally, it was observed that the SiSiO2 interface states trap holes with an efficiency that decreases as the square root of the electric field across the oxide.

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Section: Analysis and Discussionmentioning

confidence: 99%

Photon Energy Dependence of Radiation Effects in MOS Structures

Dozier

Brown

1980

IEEE Trans. Nucl. Sci.

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“…2 are typical of those found in a wide range of inorganic insulators [31,33,37]. The rising part of the curves at low beam energies is controlled primarily by the space-charge-limited current I 2 to the back electrode but is also modified by the decreasing transparency of the front electrode as the beam energy decreases [25].…”

Section: Tantalum Pentotoxidementioning

confidence: 99%

“…This is a reasonable assumption in many instances but evidence has been obtained [27] which suggests that it may not hold in SiO 2 . For such a case the full set of describing equations given by Churchill et al [31 ] needs to be solved.…”

mentioning

confidence: 99%

Electron-beam-induced conductivity and related processes in insulating films

Taylor¹

1981

IEE Proc. A Phys. Sci. Meas. Instrum. Manage. Educ. Rev. UK

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The theoretical model for electron-beam-induced conductivity in thin insulating films is reviewed and its application to gain measurements in several different insulating materials is discussed. The ideas incorporated in the model suggest a technique for investigating trapping levels in insulators, using the electron beam as a means of populating the traps. It is suggested that, in addition to determining the trap eneigy, it may be possible to investigate the spatial distribution of the traps. Electron-beam-radiation effects in SiO 2 are briefly commented upon and the dependence of A Vp^, the shift in flat-band voltage of MOS capacitors, on beam energy is discussed in terms of the gain model. Finally consideration is given to the problem of observing voltage contrast from the passivated devices in a scanning electron microscope.

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“…The effect of ionizing radiation on MOS structures was studied and modeled in a number of investigations [1][2][3][4][5][6][7][8][9][10][11][12][13]. At first, these were simplified models in which the distribution of the space charge caused by ionizing radiation was given in the form of some dependences at a number of constraints [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…Thanks to numerical methods, it became possible to investigate models of any complexity. Thus, in [4], the distributions of the potential, the field strength, the concentration of free and bound charge carriers over the depth of the dielectric under irradiation of the MOS structure as a function of the dose and voltage on the gate were obtained, and the parameters of the model were determined that give the best correspondence with the experimental dependences. In the model of Gurtov et al [5], the possibility of tunneling carriers trapped in high fields was taken into account.…”

Section: Introductionmentioning

confidence: 99%

Modeling of Radiation Effects in the MIS Devices

Zayats¹

2017

NANO

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Abstract:We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulatorsemiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.

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Dynamic model for e-beam irradiation of MOS capacitors

Cited by 18 publications

References 13 publications

Photon Energy Dependence of Radiation Effects in MOS Structures

Photon Energy Dependence of Radiation Effects in MOS Structures

Electron-beam-induced conductivity and related processes in insulating films

Modeling of Radiation Effects in the MIS Devices

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