Dynamic monte carlo simulation of high dose effects during ion bombardment

Schönborn, A.; Hecking, N.; Kaat, E.H. Te

doi:10.1016/0168-583x(89)90033-5

Cited by 22 publications

(1 citation statement)

References 28 publications

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“…It is known that these processes may variously influence the profile according to experi mental conditions and physicochemical properties of target and impurity atoms. This generates a need to cor rect the existing models [6,7] and the diffusion kinetics parameters used in them [8,9]. In previous works of our team, the high dose implantation of atomic and molec ular nitrogen into iron [8], silicon [9], and copper [10] was studied for the case when dopant atoms chemically interact with target atoms to produce stable iron, sili con, and copper nitrides.…”

Section: Introductionmentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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A physicomathematical model and dedicated software are developed for simulating high dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solv ing a set of convection-diffusion-reaction equations. The synthesis of InAs nanoclusters produced by high dose implantation of As + and In + ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 10 16 cm -2 ) and In implantation (250 keV, 2.8 × 10 16 cm -2 ) into silicon at 500°C, the nanoclusters are distributed with a density of 2.87 × 10 11 cm -2 . From experimental data and theoretical results, the coefficients of radiation stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nan oclusters), are determined. Experimental data are compared with simulation results.

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Section: Introductionmentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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Sputter depth profile analysis of marker layers

Peinador

Abril

Jiménez-Rodrı́guez

et al. 1990

Surface & Interface Analysis

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We study theoretically the distortion of marker layers embedded in homogeneous media due to energetic ion bombardment. For realistic relocation cross-sections, we have solved the balance equation, fmt proposed by Sigmund and co-workers, for the evolution of irradiated polyatomic targets. The collisional mixing operator accounts for recoil mixing, isotropic cascade mixing and surface barrier effects.Following the evolntion with ion fluence of the marker concentration profiles, we can obtain the tracer yield, which is related directly to the as-recorded intensity in a SIMS experiment. The influence of the surface barrier on signal broadening also will be discussed.

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Computer Modeling of C:H Film Growth

Möller

1991

Diamond and Diamond-Like Films and Coatings

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Dynamic monte carlo simulation of high dose effects during ion bombardment

Cited by 22 publications

References 28 publications

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

Sputter depth profile analysis of marker layers

Computer Modeling of C:H Film Growth

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