1997
DOI: 10.1109/72.595886
|View full text |Cite
|
Sign up to set email alerts
|

Dynamic neural control for a plasma etch process

Abstract: This paper presents results and commentary on using a cascade neural network and a policy-iteration optimization routine to provide suggested process setpoints for recovery from long-term machine drift in a LAM 4520 6-in dielectric etcher. Traditional plasma etch variables such as pressures, gas flows, temperatures, RF power, etc, are combined with a generalized representation of the time dependent effects of maintenance events to predict film etch rates, uniformity, and selectivity, A cascade neural-network m… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
6
0

Year Published

1998
1998
2012
2012

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 15 publications
0
6
0
Order By: Relevance
“…This is not a substantial issue in high-volume manufacturing, such as semiconductor etch, since most production plants are equipped with extensive databases for the recording of large numbers of process variables. Such data have been used in [82], [123], and [131]- [133] to train a neural network for the mapping of etch process input/ output relationships. A neural network model, predicting etch rate, is combined with a real-time optimizer in [131] to provide process setpoints to alleviate long-term process drift and sensitivity to PM interventions.…”
Section: ) Multivariable Modelsmentioning
confidence: 99%
See 1 more Smart Citation
“…This is not a substantial issue in high-volume manufacturing, such as semiconductor etch, since most production plants are equipped with extensive databases for the recording of large numbers of process variables. Such data have been used in [82], [123], and [131]- [133] to train a neural network for the mapping of etch process input/ output relationships. A neural network model, predicting etch rate, is combined with a real-time optimizer in [131] to provide process setpoints to alleviate long-term process drift and sensitivity to PM interventions.…”
Section: ) Multivariable Modelsmentioning
confidence: 99%
“…Such data have been used in [82], [123], and [131]- [133] to train a neural network for the mapping of etch process input/ output relationships. A neural network model, predicting etch rate, is combined with a real-time optimizer in [131] to provide process setpoints to alleviate long-term process drift and sensitivity to PM interventions. The ANN model is trained with extensive historical process data prior to use.…”
Section: ) Multivariable Modelsmentioning
confidence: 99%
“…Some works utilize neural networks to deal with the complexities [16][17][18]. In this paper, we ascribe the run to run variation of a process step to only one factor, the time.…”
Section: ) Design For Manufacturing (Dfm) In This Method Everymentioning
confidence: 99%
“…Typically an IC process involves hundreds of steps. APC methods are used to improve qualities of those key process steps, such as implantation [15], photolithography [16], and plasma etching [17], etc. Some IC process steps are so complicated that they are dealt with by neural networks in recent works [17][18][19].…”
Section: ) Design For Manufacturing (Dfm) In This Method Everymentioning
confidence: 99%
“…Finally, by including a riskbased objective function in all optimization analyses, the DNC is able to quantify the degree to which a corrective adjustment is needed and the degree to which the overall risk of operation is reduced by performing the optimized recommendations. The DNC returns on a wafer-to-wafer basis a series of risk-reduction ranked corrective actions that may include process setpoint adjustments specific to recipe and maintenance corrective actions [9]. Within the same model, the DNC discriminates between several repair actions based on their impact on wafer quality and can predict wafer quality for all quality variables after one or more simulated repair actions .…”
Section: Introductionmentioning
confidence: 99%