Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

Meng, Zhiguo; Li, Yang; Wu, Congcong; Zhao, Shuyun; Li, Juan; Wong, Man; Sing-Kwok, Hoi; Xiong, Shanxin

doi:10.1088/1674-1056/17/4/044

Chinese Phys. B

2008

DOI: 10.1088/1674-1056/17/4/044

|View full text |Cite

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

Zhiguo Meng

Yang Li

Congcong Wu

et al.

Abstract: Meng Zhi-Guo(孟志国) a) , Li Yang(李阳) a) , Wu Chun-Ya(吴春亚) a) , Zhao Shu-Yun(赵淑芸) a) , Li Juan(李娟) a) , Man Wong(王文) b) , Hoi Sing-Kwok(郭海诚) b) , and Xiong Shao-Zhen(熊绍珍) a)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2016

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Technology demonstration of a novel poly-Si nanowire thin film transistor

Liu¹,

Liang²,

Shan³

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

A simple process flow method for the fabrication of poly-Si nanowire thin film transistors (NW-TFTs) without advanced lithographic tools is introduced in this paper. The cross section of the nanowire channel was manipulated to have a parallelogram shape by combining a two-step etching process and a spacer formation technique. The electrical and temperature characteristics of the developed NW-TFTs are measured in detail and compared with those of conventional planar TFTs (used as a control). The as-demonstrated NW-TFT exhibits a small subthreshold swing (191 mV/dec), a high ON/OFF ratio (8.5 × 10 7 ), a low threshold voltage (1.12 V), a decreased OFF-state current, and a low drain-induced-barrier lowering value (70.11 mV/V). The effective trap densities both at the interface and grain boundaries are also significantly reduced in the NW-TFT. The results show that all improvements of the NW-TFT originate from the enhanced gate controllability of the multi-gate over the channel.

show abstract

Technology demonstration of a novel poly-Si nanowire thin film transistor

Liu¹,

Liang²,

Shan³

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

Abstract: Meng Zhi-Guo(孟志国) a) , Li Yang(李阳) a) , Wu Chun-Ya(吴春亚) a) , Zhao Shu-Yun(赵淑芸) a) , Li Juan(李娟) a) , Man Wong(王文) b) , Hoi Sing-Kwok(郭海诚) b) , and Xiong Shao-Zhen(熊绍珍) a)

Cited by 1 publication

References 6 publications

Technology demonstration of a novel poly-Si nanowire thin film transistor

Technology demonstration of a novel poly-Si nanowire thin film transistor

Contact Info

Product

Resources

About

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

Abstract: Meng Zhi-Guo(孟志国) a) , Li Yang(李 阳) a) , Wu Chun-Ya(吴春亚) a) , Zhao Shu-Yun(赵淑芸) a) , Li Juan(李 娟) a) , Man Wong(王 文) b) , Hoi Sing-Kwok(郭海诚) b) , and Xiong Shao-Zhen(熊绍珍) a)

Cited by 1 publication

References 6 publications

Technology demonstration of a novel poly-Si nanowire thin film transistor

Technology demonstration of a novel poly-Si nanowire thin film transistor

Contact Info

Product

Resources

About

Abstract: Meng Zhi-Guo(孟志国) a) , Li Yang(李阳) a) , Wu Chun-Ya(吴春亚) a) , Zhao Shu-Yun(赵淑芸) a) , Li Juan(李娟) a) , Man Wong(王文) b) , Hoi Sing-Kwok(郭海诚) b) , and Xiong Shao-Zhen(熊绍珍) a)