Abstract:The dynamic on-state resistance instability of a high-current cascode
multi-GaN-chip power module under high frequency and voltage switching
conditions is demonstrated in this paper. The presented double pulse
test (DPT) topology is utilized to evaluate switching dependencies on
voltage, current, and frequency, showing its versatility in
investigating the switching instability of the device. The extended
defects in the buffer layer resulted in a decrease in dynamic on-state
resistance (RDS-ON) under hard switc… Show more
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