Abstract:Vertical structures of n + /n-GaAs/Al 0.2 Ga 0.8 As designed as radiation detectors for microwave electronics have been the subject of continuous wave and dynamic photoluminescence studies. Both light emission lifetimes and photoluminescence spectra were investigated to find the possible mechanisms of carrier recombination. The characteristic time of free exciton emission in the n-GaAs layer corresponds to 0.73 ns at a temperature of 3.6 K, 1.1 ns at 77 K and 1.3 ns at 300 K. The band-to-band transition lifeti… Show more
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