Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature

Järvinen, J.; Ahokas, J.; Sheludiakov, S.; Vainio, O.; Zvezdov, D.; Lehtonen, Liisa; Vlasenko, L. S.; Vasiliev, S.

doi:10.1007/s00723-017-0875-z

Cited by 4 publications

(7 citation statements)

References 20 publications

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“…As a result, pumping the first line with maximum power does not lead to a substantial transfer of area back to the other lines. 7 Nuclear spin state remains unchanged in this case, and the 29 Si DNP is not mixed with that for the donor. Typically the nuclear spins of donors in the sample were polarized to the 3/2 state in the beginning of the experimental run.…”

Section: Methodsmentioning

confidence: 84%

“…The decay of the hole with short burn times is reasonably well described by eq. (7). With longer burning times, however, the deviation is larger.…”

Section: Spectral and Spin Diffusionmentioning

confidence: 90%

“…Additional details of the experimental setup can be found in ref. 7 The full quartet of the ESR spectrum of 75 As donors is shown in fig. 2.…”

Section: Methodsmentioning

confidence: 99%

“…The OE or SE DNP can be efficiently used for creating high degree of nuclear polarization of the donor nuclear spins, which we demonstrated in our previous studies. 5,7 We use this technique to transfer spin population to one of the four lowest energy levels of 75 As with certain nuclear spin projection of the donor. This modifies the quartet of the 75 As ESR lines in the following way.…”

Section: Methodsmentioning

confidence: 99%

“…This ensures high degree of polarization of electron spins, extremely slow nuclear relaxation, and allows performing Overhauser (OE) and resolved solid effect (SE) DNP. In our previous work [5][6][7] we realized these conditions at temperatures < 1 K and magnetic field of 4.6 T. We demonstrated efficient control of the donor nuclear spins of 31 P and 75 As using OE DNP. Highly polarized nuclear state was created with fairly low ESR pumping power of 1 µW.…”

Section: Introductionmentioning

confidence: 99%

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Dynamic nuclear polarization and ESR hole burning in As doped silicon

Järvinen

Zvezdov

Ahokas

et al. 2020

Phys. Chem. Chem. Phys.

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We present an experimental study of the Dynamic Nuclear Polarization (DNP) of 29 Si nuclei in silicon crystals of natural abundance doped with As in the temperature range 0.1-1 K and in strong magnetic field of 4.6 T. This ensures very high degree of electron spin polarization, extremely slow nuclear relaxation and optimal conditions for realization of Overhauser and resolved solid effects. We found that the solid effect DNP leads to an appearance of a pattern of holes and peaks in the ESR line, separated by the super-hyperfine interaction between the donor electron and 29 Si nuclei closest to the donor. On the contrary, the Overhauser effect DNP mainly affects the remote 29 Si nuclei having the weakest interaction with the donor electron. This leads to an appearance of a very narrow (≈ 3 mG wide) hole in the ESR line. We studied relaxation of the holes after burning, which is caused by the nuclear spin diffusion. Analyzing the spin diffusion data with a simple one-dimensional spectral diffusion model leads to a value of the spectral diffusion coefficient D = 8(3) × 10 −3 mG 2 /s. Our data indicate that the spin diffusion is not completely prevented even in the frozen core near the donors. The emergence of the narrow hole after the Overhauser DNP may be explained by a partial "softening" of the frozen core caused by Rabi oscillations of the electron spin.

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Section: Methodsmentioning

confidence: 84%

“…The decay of the hole with short burn times is reasonably well described by eq. (7). With longer burning times, however, the deviation is larger.…”

Section: Spectral and Spin Diffusionmentioning

confidence: 90%

“…Additional details of the experimental setup can be found in ref. 7 The full quartet of the ESR spectrum of 75 As donors is shown in fig. 2.…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Dynamic nuclear polarization and ESR hole burning in As doped silicon

Järvinen

Zvezdov

Ahokas

et al. 2020

Phys. Chem. Chem. Phys.

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Low temperature Overhauser effect in silicon doped with As75 in strong magnetic fields

Lifshits

Аверкиев

2023

Solid State Communications

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Experimental cell with a Fabry–Pérot resonator tuned in situ for magnetic resonance studies of matrix-isolated radicals at temperatures below 1 K

Sheludiakov

Lee

Khmelenko

et al. 2020

Review of Scientific Instruments

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We describe the design and construction of an experimental cell for the study of free radicals in macroscopically thick films of solidified molecular and rare gases by 128 GHz Electron Spin Resonance (ESR) at temperatures below 1 K. The ESR resonator has an open Fabry-Perot design and its frequency can be tuned in situ by adjusting the spacing between the mirrors. The tuning mechanism consists of a piezo positioner and stainless-steel edge-welded bellows which can change the resonator frequency by at least 6 GHz. The films of solidified gases can be deposited either directly from a room temperature reservoir or by recondensing from a specially arranged chamber. The free radicals can be created in the solid films by dissociating matrix species by running an rf discharge in helium vapor. We suggest that such a sample cell design can also be used for a broad range of low-temperature ESR experiments where sample cooling needs to be enhanced by the presence of superfluid helium.

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Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature

Cited by 4 publications

References 20 publications

Dynamic nuclear polarization and ESR hole burning in As doped silicon

Dynamic nuclear polarization and ESR hole burning in As doped silicon

Low temperature Overhauser effect in silicon doped with As75 in strong magnetic fields

Experimental cell with a Fabry–Pérot resonator tuned in situ for magnetic resonance studies of matrix-isolated radicals at temperatures below 1 K

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