2008
DOI: 10.1063/1.2957479
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Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

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Cited by 37 publications
(20 citation statements)
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“…At threshold, the gain spectrum exhibits a full-width at half maximum (FWHM) of about 81 nm and a maximum net modal gain Γg-α i (where α i is the internal loss WI WI The non-zero LEF value originates from the inhomogeneous broadening as well as the carrier filling in the off-resonant states, which leads to the asymmetric gain spectrum [29], [30]. Although the differential gain is usually strongly reduced at longer wavelengths, the extracted LEF values are relatively similar to those measured on 1520 nm InAs/InP(311B) QD lasers [31]. Figure 4 shows the experimental setup, where two tunable CW lasers (TL 1,2 : Yenista Optics, T100S ) are injected into the QD laser via an optical circulator.…”
Section: Description Of the Quantum Dot Devicesupporting
confidence: 72%
“…At threshold, the gain spectrum exhibits a full-width at half maximum (FWHM) of about 81 nm and a maximum net modal gain Γg-α i (where α i is the internal loss WI WI The non-zero LEF value originates from the inhomogeneous broadening as well as the carrier filling in the off-resonant states, which leads to the asymmetric gain spectrum [29], [30]. Although the differential gain is usually strongly reduced at longer wavelengths, the extracted LEF values are relatively similar to those measured on 1520 nm InAs/InP(311B) QD lasers [31]. Figure 4 shows the experimental setup, where two tunable CW lasers (TL 1,2 : Yenista Optics, T100S ) are injected into the QD laser via an optical circulator.…”
Section: Description Of the Quantum Dot Devicesupporting
confidence: 72%
“…The two K-factors are nearly the same ~0.2 ns, which is 3 times smaller than the experimental value 0.6 ns [17]. Such a discrepancy can be attributed to the fact that the simulation does not take into account the gain saturation effects.…”
Section: Experimental Results and Simulationsmentioning
confidence: 68%
“…The studied laser device under experiment is a InAs/InP(311B) QD laser [17], where the heterostructure is grown by MBE on a (311)B oriented InP substrate and it has as-cleaved facet. The active region consists of 5 QD layers, and the dot density is ~10 11 cm 2 [26].…”
Section: Experimental Results and Simulationsmentioning
confidence: 99%
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