Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Hernandez-Barrios, Y.; Gaspar-Angeles, J. N.; Estrada, M.; Iñı́guez, Benjamı́n; Cerdeira, A.

doi:10.1109/jeds.2020.3045347

Search citation statements

Order By: Relevance

Paper Sections

Select...

Compact Model Validation1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2021

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A 19-stage IGZO TFT Ring Oscillator (RO) was experimentally characterized to validate the AOS TFT model [108]. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, was compared with measured characteristics, obtaining a very good agreement (Fig.…”

Section: Compact Model Validationmentioning

confidence: 95%

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Iñı́guez

Nathan

Kloes

et al. 2021

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

show abstract

Section: Compact Model Validationmentioning

confidence: 95%