Dynamic thermoelectric model of a light-emitting structure with a current spreading layer

Сергеев, В. А.; Hodakov, A. M.

doi:10.1134/s1063782616080224

Cited by 1 publication

(2 citation statements)

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“…The experimental verification of the steady-state lateral junction current profile has significance not only for laser and LED designs discussed in great length elsewhere, [2][3][4][5][6]20 but can also be extended to previously published results on EES. In EES, the intensities and energy distributions of the emitted electrons through apertures from biased LEDs were quantitatively correlated to the efficiency droop of the LEDs.…”

Section: Area Of Diodementioning

confidence: 74%

“…The lateral current flow in a diode is highly non-linear, with current crowding near the metal edges leading to non-uniform emission and local heating effects. [1][2][3][4][5][6] At visible wavelengths, these issues can be reasonably mitigated by employing transparent conductive oxides (TCOs) which introduces light absorbers and cannot be extended to other wavelengths. 7 It is hence important to study the potential and steady-state current profile of a diode design, as they inform current crowding circumvention in LEDs and laser diodes.…”

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confidence: 99%

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Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Ho,

Johnson,

Tak

et al. 2023

Applied Physics Letters

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We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

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