“…Within the last 30 years the Si(111)(4×1)-In surface has become a model system to study electronic and thermal transport [256], phase transitions [102,107,117,237] as well as atomic scale defects [234] and fluctuations [257,258] in low-dimensional materials. Since its discovery, the (4×1) phase has been examined by a large number of different experimental methods, including LEED [117,259], I(V)-LEED [195], RHEED [116,260,261], reflective high-energy positron diffraction (RHEPD) [262], X-ray diffraction (XRD) [263], angle-resolved photoemission spectroscopy (ARPES) [12,153,250], Core-level PES [264], Auger-electron spectroscopy (AES) [260], electron energy loss spectroscopy (EELS) [265,266], reflectance anisotropy spectroscopy (RAS) [267][268][269][270], Raman spectroscopy [240,269,271], electrical transport measurements [261,272], and STM [125,234,255,[273][274][275]. From a theory perspective, the system has been investigated by density functional theory (DFT) [276,277] and other approaches…”