Dynamical study of the transport properties of η-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mo</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>11</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>single c

Sasaki, Minoru; Tai, G. X.; Tamura, Shigehiko; Inoue, M.

doi:10.1103/physrevb.47.6216

Cited by 38 publications

(16 citation statements)

References 20 publications

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“…1͒, which have equal areas corresponding to hole and electron Fermi surfaces. 43,44 There is also strong experimental evidence to support this picture from tunneling studies, 33 transient thermoelectric effect measurements, 14 and the SdHo data reported in this paper. Figure 18 depicts the energy spectrum in magnetic field for a perfectly compensated, two-band, two-dimensional semimetal.…”

Section: Discussionsupporting

confidence: 60%

“…25,34 Estimates of the areal carrier densities for each Fermi surface pocket are of the order 10 11 -10 12 cm Ϫ2 , approximately one thousandth of the room-temperature density. These areal densities are of the same order of magnitude as those obtained from transient thermoelectric effect measurements, 14 though a one-to-one correspondence is not obtained. Note that all of these orbits will reach the quantum limit ͑the fundamental frequency of that orbit͒ by 20 T.…”

Section: B Low-field A*-axis Transport Propertiesmentioning

confidence: 49%

“…In doing this, we obtain a separation of 20 meV, which is of the same order as values of ϳ5 meV obtained from tunneling studies, 33 and ϳ10 meV from transient thermoelectric effect measurements. 14 Above 25 T the experimentally determined gap ͑⌬͒ appears to saturate at a value close to ⌬ϭ70 K. This saturation reflects the underlying CDW-II energy gap, or some other activated conduction channel, i.e., as the field increases, the gap between the conduction and valence bands in Fig. 18 ͑shaded area͒ will exceed the CDW-II energy gap which separates the nested parts of the Fermi surface.…”

Section: Discussionmentioning

confidence: 92%

“…1͑a͔͒ elongated along the a* axis are predicted, in agreement with recent experiments. 14 Within the b*c* plane, the electronic properties show considerable anisotropy 10,11 reflecting a ''hidden'' quasi-one-dimensional character of the Fermi surface. 13,15 This ''hidden'' one dimensionality is related to the presence of quasi-onedimensional chains of MoO 6 octahedra along the three crystallographic directions b and bϮc.…”

Section: Introductionmentioning

confidence: 99%

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Quantum limit and anomalous field-induced insulating behavior in η-Mo4O11<

Hill

Valfells

Uji³

et al. 1997

Phys. Rev. B

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The quasi-two-dimensional metal -Mo 4 O 11 undergoes two successive charge-density-wave transitions at 109 and 30 K, with corresponding changes in the electronic structure. Measurements of the magnetoresistance, Hall effect, and magnetization, in magnetic fields of up to 50 T and as a function of temperature and pressure, have been performed to determine the ground-state electronic structure. Several distinct quantum oscillations are observed in the low-field magnetoresistance, corresponding to very small closed Fermi surfaces, all of which reach the quantum limit by 20 T. Analysis of the quantum oscillation amplitudes indicate very low carrier effective masses (m*Ͻ0.1m e ) associated with each of the closed two-dimensional Fermi-surface pockets. At higher fields ͑BϾ20 T͒ we see a crossover from ͑semi-͒ metallic to semiconducting behavior, which we associate with a field-induced electron-and hole-band inversion, resulting in a clear gap at the Fermi energy. Measurements of this energy gap allow an independent determination of the carrier effective masses, which are in excellent agreement with the values obtained from the analysis of the low-field ͑BϽ15 T͒ quantum oscillations. We find that the transport and thermodynamic properties of the field-induced insulating state are highly anomalous. In particular, we discuss the Hall effect and the origin of an additional quantum oscillation at high magnetic fields ͑BϾ20 T͒. ͓S0163-1829͑97͒00504-3͔

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Section: Discussionsupporting

confidence: 60%

Section: B Low-field A*-axis Transport Propertiesmentioning

confidence: 49%

Section: Discussionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Quantum limit and anomalous field-induced insulating behavior in η-Mo4O11<

Hill

Valfells

Uji³

et al. 1997

Phys. Rev. B

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“…At 4 K, the mobility reaches a significantly large value of µ ≃ 28000 cm 2 /Vs, comparable to that of high-purity Si or Ge semiconductors. 22,23 Such a large value of the mobility at low temperatures has been also observed in several Kondo insulators and charge-density-wave systems, 24,25 because of an enhancement of the scattering time due to gap opening. Previous studies of the transport properties have shown a large mobility in FeSb 2 .…”

Section: Resultsmentioning

confidence: 93%

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

et al. 2011

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We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the lowtemperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10 −4 ppm/unit cell and the mobility increases from 2000 to 28000 cm 2 /Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

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Charge Density Waves in Quasi Two-Dimensional Inorganic Conductors — Molybdenum and Phosphate Tungsten Bronzes

Schlenker

1996

NATO ASI Series

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Dynamical study of the transport properties of η-Mo4O11single c

Cited by 38 publications

References 20 publications

Quantum limit and anomalous field-induced insulating behavior in η-Mo4O11<

Quantum limit and anomalous field-induced insulating behavior in η-Mo4O11<

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

Charge Density Waves in Quasi Two-Dimensional Inorganic Conductors — Molybdenum and Phosphate Tungsten Bronzes

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