SummaryWe present a novel, fast, and cost-effective method to measure the capacitance-voltage relation of an electronic device. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. A new way is introduced to correct for non-linearities of the used components. C-V curves are measured in less than a millisecond, with measurement accuracy well below 1%. The technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor.Fast RF-CV Characterization Through High-Speed 1-port S-parameter Measurements Abstract-We present a novel method to measure the capacitancevoltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.