Theoretical analysis of second-order surface-emitting, complex-coupled distributed feedback diode lasers with first-order distributed Bragg reflectors ͑DBR͒ is presented. The DBR reflectors are shown to insure simultaneous operation in a virtually uniform near-field profile with high efficiency and adequate intermodal discrimination. Such devices display symmetric-mode ͑single-lobe͒ surface emission with relatively high external differential quantum efficiency ͑30%͒, low gain threshold ͑18 cm Ϫ1 ), and Ͻ8% near-field intensity profile variations ͑in the longitudinal direction͒. The devices have the potential to provide Ͼ100 mW of stable, single-mode cw power, significantly higher than it is possible with vertical-cavity surface-emitting lasers. It is also shown that the device studied here can be combined with a resonant optical waveguide array device to produce a 2D uniform near-field surface-emitting source capable of providing greater than 1 W cw power in a stable, single-lobed beam. © 1998 American Institute of Physics. ͓S0003-6951͑98͒01542-3͔Complex-coupled, distributed-feedback ͑CC-DFB͒ edgeemitting lasers have recently received considerable theoretical and experimental attention as potential light sources in advanced optical-communication systems. [1][2][3][4][5][6] We have previously reported the theoretical analysis of antiphase-type 7,8 ͑i.e., excess gain preferentially placed in the low-index regions͒ second-order, surface-emitting ͑SE͒-CC-DFB lasers. Such devices can be made to fundamentally favor operation in a single-lobed beam that is normal to the surface. Although ridge-guided devices of this type should be capable of providing 50-100 mW cw power, they are unsuitable for high power single-mode applications, since they have highly nonuniform near-field intensity profiles 7 which make them susceptible to multimode operation due to longitudinal gain spatial hole burning ͑GSHB͒ at high drive levels above threshold. Here we show that by integrating first-order distributed Bragg reflectors ͑DBR͒ at the ends of the SE-CC-DFB structure, surface-emitting devices can be made to lase with both high external differential quantum efficiencies, D , as well as highly uniform near-field intensity profiles.That is, a design is presented for high-power (Ͼ100 mW͒ stable, single-mode operation from surface-emitting diode lasers. Figure 1 schematically depicts a second-order SE-CC-DFB with first-order DBRs. Surface emission occurs only in the second-order region, while the first-order DBRs serve as terminations for the SE-CC-DFB. We show that such devices can lase in a single-lobed beam pattern with gain thresholds of ϳ18 cm Ϫ1 and an D value of 30%, while maintaining a virtually uniform near-field profile. Furthermore, it can be inferred that by combining this surface-emitting device with a resonant optical waveguide ͑ROW͒ array one can create a two-dimensional surface-emitting laser capable of providing greater than 1 W cw single-mode power in a stable, singlelobed beam.The longitudinal cross section of the device...