2007 Quantum Electronics and Laser Science Conference 2007
DOI: 10.1109/qels.2007.4431146
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Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well

Abstract: Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.

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