Dynamics of laser stimulated interaction of chlorine with the GaAs(100) surface

Qin, Qi‐Zong; Li, Y.L.; Jin, Zhong; Zhang, Z.J.; Yang, Yi; Jia, W.J.; Zheng, Qike

doi:10.1016/0039-6028(88)90252-x

Cited by 25 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of the technological importance of these processes, many studies (only some of which are listed here) have looked at how ion beams and plasmas (32)(33)(34)(35)(36)(37), as well as the individual constituents of plasmas [e.g. ions , atoms (38)(39)(40)(41), radicals (26,(42)(43)(44)(45), hot molecules (46,47), electrons (48)(49)(50)(51)(52)(53)(54)(55), and photons (56)(57)(58)(59)(60)(61)(62)(63)(64)(65)(66)(67)(68)(69)], act to etch semiconductor substrates.…”

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

View full text Add to dashboard Cite

It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF 2 , Cl 2 , Br 2 , and I 2 ) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

View full text Add to dashboard Cite

show abstract

“…3 There are two kinds of mechanisms for E KJ mol dissociative chemisorption. T5=700 K. the angular distribution of desorbing species is nearly the The flux distribution can also be fit by eq.…”

Section: 1 Angular Thstributions Of Reaction Productsmentioning

confidence: 99%

<title>Angle-resolved time-of-flight studies of laser-assisted chemical etching reactions</title>

Qin

Zhang

1994

SPIE Proceedings

View full text Add to dashboard Cite

Laser-assisted chemical etching reactions of Cl2 with semiconductor surfaces are investigated using a cw supersonic Cl2 molecular beam coupled with an angle-resolved time-of-flight (TOF) technique. TOF spectra of reaction products are measured as a function of the detection angle. laser fluence and normal component of incident molecules' translational energy. Our results show that the differences in the above etching reactions at 355 and 1064 nm radiations can be explained by the different mechanisms of laser-stimulated desorption process. The flux of the reaction products linearly increases with increasing the nonnal component of the incident translational energy of Cl2 molecules. It implies that the mechanism of Cl2 chemisorption on the surfaces might be a direct translationally activated dissociative chemisorption. SPIE Vol. 2125 /329 / LB Downloaded From: http://proceedings.spiedigitallibrary.org/ on 07/03/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

show abstract

Molecular Beam Studies on the Laser‐Enhanced Surface Reaction of GaAs(100) with Chlorine

Qin

Zhang

et al. 1995

J Chinese Chemical Soc

View full text Add to dashboard Cite

A cw supersonic Cl2 molecular beam coupled with an angle‐resolved time‐of‐flight (TOF) technique has been used to investigate the laser‐enhanced surface reaction of GaAs(100) with chlorine. The mass and velocity distributions of the major reaction products under 1064 nm laser irradiation have been measured as a function of laser fluence, detection angle, surface temperature and normal component of the translational energy of the incident chlorine molecules. It has been found that increasing both laser fluence and the translational energy of incident chlorine molecules markedly enhance mis surface reaction. The measured flux angular distributions of major reaction products can be fit satisfactorily with a bi‐cosine function. Measurements of the mass and angular distributions of reaction products by a modulated molecular beam mass spectrometry show that the surface temperature effect is obvious for the Cl2/GaAs(100) “dark” thermal reaction. A direct activated dissociative chemisorption is proposed for the mechanism of Cl2 chemisorption on the GaAs(100) surface.

show abstract

Dynamics of laser stimulated interaction of chlorine with the GaAs(100) surface

Cited by 25 publications

References 25 publications

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

<title>Angle-resolved time-of-flight studies of laser-assisted chemical etching reactions</title>

Molecular Beam Studies on the Laser‐Enhanced Surface Reaction of GaAs(100) with Chlorine

Contact Info

Product

Resources

About